Datasheet > UC1611QTR

UC1611QTR

更新时间： 2024-11-28 07:56:03

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
4页	158K
描述
ARRAY OF INDEPENDENT DIODES,LDCC

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数据手册

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UC1611QTR 数据手册

UC1611

UC3611

Quad Schottky Diode Array

FEATURES

DESCRIPTION

•

Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual

diodes or as a high-speed, high-current bridge. It is particularly useful on

the outputs of high-speed power MOSFET drivers where Schottky diodes

High Peak Current

are needed to clamp any negative excursions caused by ringing on the

driven line.

Low-Cost MINIDIP Package

Low-Forward Voltage

These diodes are also ideally suited for use as voltage clamps when driv-

ing inductive loads such as relays and solenoids, and to provide a path

for current free-wheeling in motor drive applications.

Parallelable for Lower VF or Higher IF

Fast Recovery Time

The use of Schottky diode technology features high efficiency through

lowered forward voltage drop and decreased reverse recovery time.

Military Temperature Range Available

This single monolithic chip is fabricated in both hermetic CERDIP and

copper-leaded plastic packages. The UC1611 in ceramic is designed for

-55°C to +125°C environments but with reduced peak current capability:

while the UC3611 in plastic has higher current rating over a 0°C to +70°C

ambient temperature range.

CONNECTION DIAGRAM

DIL-8 (TOP VIEW)

N or J Package

SOIC-16 (TOP VIEW)

DW Package

PLCC-20 (TOP VIEW)

Q Package

6/93

12 3 4

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与UC1611QTR相关器件

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UC1612L	TI	获取价格	Dual Schottky Diode
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