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SLUS338A – JUNE 1993 – REVISED MAY 2001
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FEATURES
DESCRIPTION
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Matched, Four-Diode Monolithic Array
High Peak Current
This four-diode array is designed for general
purpose use as individual diodes or as a
high-speed, high-current bridge. It is particularly
useful on the outputs of high-speed power
MOSFET drivers where Schottky diodes are
needed to clamp any negative excursions caused
by ringing on the driven line.These diodes are also
ideally suited for use as voltage clamps when
driving inductive loads such as relays and
solenoids, and to provide a path for current
free-wheeling in motor drive applications.The use
of Schottky diode technology features high
efficiency through lowered forward voltage drop
and decreased reverse recovery time.This single
monolithic chip is fabricated in both hermetic
CERDIP and copper-eaded plastic packages.
The UC1611 in ceramic is designed for –55°C to
125°C environments but with reduced peak
current capability: while the UC3611 in plastic has
higher current rating over a 0°C to 70°C ambient
temperature range.
Low-Cost MINIDIP Package
Low-Forward Voltage
Parallelable for Lower V or Higher I
F
F
Fast Recovery Time
Military Temperature Range Available
AVAILABLE OPTIONS
Packaged Devices
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J
A
SOIC Wide (DW)
UC1611DW
DIL (J)
UC1611J
UC3611J
DIL (N)
UC1611N
UC3611N
–55°C to 125°C
0°C to 70°C
UC3611DW
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Copyright 2001, Texas Instruments Incorporated
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ꢚ ꢞ ꢛ ꢚꢓ ꢔꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ
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