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UC1611-SP PDF预览

UC1611-SP

更新时间: 2024-11-25 11:07:51
品牌 Logo 应用领域
德州仪器 - TI 整流二极管肖特基二极管
页数 文件大小 规格书
7页 179K
描述
专为天基应用打造的四肖特基二极管阵列

UC1611-SP 数据手册

 浏览型号UC1611-SP的Datasheet PDF文件第2页浏览型号UC1611-SP的Datasheet PDF文件第3页浏览型号UC1611-SP的Datasheet PDF文件第4页浏览型号UC1611-SP的Datasheet PDF文件第5页浏览型号UC1611-SP的Datasheet PDF文件第6页浏览型号UC1611-SP的Datasheet PDF文件第7页 
ꢀ ꢁꢂ ꢃꢂꢂ  
ꢀ ꢁꢄ ꢃꢂꢂ  
SLUS338A – JUNE 1993 – REVISED MAY 2001  
FEATURES  
DESCRIPTION  
D
D
D
D
D
D
D
Matched, Four-Diode Monolithic Array  
High Peak Current  
This four-diode array is designed for general  
purpose use as individual diodes or as a  
high-speed, high-current bridge. It is particularly  
useful on the outputs of high-speed power  
MOSFET drivers where Schottky diodes are  
needed to clamp any negative excursions caused  
by ringing on the driven line.These diodes are also  
ideally suited for use as voltage clamps when  
driving inductive loads such as relays and  
solenoids, and to provide a path for current  
free-wheeling in motor drive applications.The use  
of Schottky diode technology features high  
efficiency through lowered forward voltage drop  
and decreased reverse recovery time.This single  
monolithic chip is fabricated in both hermetic  
CERDIP and copper-eaded plastic packages.  
The UC1611 in ceramic is designed for –55°C to  
125°C environments but with reduced peak  
current capability: while the UC3611 in plastic has  
higher current rating over a 0°C to 70°C ambient  
temperature range.  
Low-Cost MINIDIP Package  
Low-Forward Voltage  
Parallelable for Lower V or Higher I  
F
F
Fast Recovery Time  
Military Temperature Range Available  
AVAILABLE OPTIONS  
Packaged Devices  
T
= T  
J
A
SOIC Wide (DW)  
UC1611DW  
DIL (J)  
UC1611J  
UC3611J  
DIL (N)  
UC1611N  
UC3611N  
–55°C to 125°C  
0°C to 70°C  
UC3611DW  
ꢋꢞ  
Copyright 2001, Texas Instruments Incorporated  
ꢚ ꢞ ꢛ ꢚꢓ ꢔꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ  
1
www.ti.com  

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