Datasheet > UA2V50HM-Amplifier-Module

UA2V50HM-Amplifier-Module

更新时间： 2024-11-25 14:52:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	515K
描述
The UA2V50HM Amplifier is a general-purpose broadband, connectorized amplifier with a frequency sp

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UA2V50HM

2 - 50GHz High Gain Power Amplifier

Application

Features

The UA2V50HM Amplifier is an ideal selection

for laboratory and instrumentation systems

where a high performance broadband RF

power amplifier is required. Examples include

use as a post amplifier for synthesizers,

mixers, modulators, etc. where output

powers are low and need to be increased

to the 20dBm to 30dBm range. The amplifier

was designed for use in communications

systems, test equipment, military systems, etc.

• 30dBm output power @ 10GHz

• 26dBm output power @ 40GHz

• 28dB gain to 26GHz

• 25dB gain to 40GHz

• Useful gain and power to 50GHz

• Small Size

• ECCN 3A001.b.4.c

Description

The UA2V50HM Amplifier

is a broadband, high power, high

gain instrumentation grade amplifier.

The amplifier was designed to provide

exceptional gain flatness per octave

over greater than 5 octaves of

frequency coverage. The 2 GHz to 50

GHz amplifier provides up to 30dB

of gain and 30dBm output power

with low harmonics and low residual

phase noise.

Key Characteristics @ 25˚C: VD1 = VD2 = 6V; VD3 = 7V; Vg1 = Vg2 = Vg3 = -0.1V; Zo = 50Ω

Parameter

Psat (dBm)

P1dB (dBm)

S21 (dB)

S11 (dB)

Description

Saturated Output Power

1db Compressed Power

Small Signal Gain

Input Match

2-10GHz Typ 10-26GHz Typ 26-40GHz Typ 40-50GHz Typ

-15

-12

-60

-15

-10

-60

-8

-10

-6

S22 (dB)

S12 (dB)

NF (dB)

Output Match

-6

Reverse Isolation

Noise Figure

-50

10.5

-50

SMD-00190 Rev D

Subject to Change Without Notice

1 of 4

12 3 4

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