Datasheet > U636H04SC45

U636H04SC45

更新时间： 2024-11-08 10:02:43

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
11页	156K
描述
IC,NOVRAM,512X8,CMOS,SOP,24PIN,PLASTIC

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中文翻译

获取价格

数据手册

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U636H04SC45 数据手册

Preliminary

U636H04

PowerStore 512 x 8 nvSRAM

The SRAM can be read and written

an unlimited number of times, while

Features

Description

independent nonvolatile date resi-

des in EEPROM.

The U636H04 combines the high

performance and ease of use of a

fast SRAM with nonvolatile data

integrity.

High-performance CMOS non-

volatile static RAM 512 x 8 bits

25 and 45 ns Access Times

12 and 25 ns Output Enable

Access Times

The U636H04 has two separate

modes of operation: SRAM mode

and nonvolatile mode.

In SRAM mode, the memory ope-

rates as an ordinary static RAM. In

I_CC= 15 mA at 200 ns Cycle Time nonvolatile operation, data is trans-

Unlimited Read and Write to

SRAM

Automatic STORE to EEPROM

on Power Down using system

capacitance

ferred in parallel from SRAM to

EEPROM or from EEPROM to

SRAM.

In this mode SRAM functions are

disabled.

Automatic STORE Timing

10⁵STORE cycles to EEPROM

10 years data retention in

EEPROM

Automatic RECALL on Power Up

Unlimited RECALL cycles from

EEPROM

Single 5 V ± 10 % Operation

Operating temperature ranges:

0 to 70 °C

The U636H04 is a fast static RAM

(25 and 45 ns), with a nonvolatile

electrically

erasable

PROM

(EEPROM) element incorporated

in each static memory cell. Data

transfers from the SRAM to the

EEPROM (the STORE operation)

take place automatically upon

power down using charge stored in

system capacitance. Transfers

from the EEPROM to the SRAM

(the RECALL operation) take place

automatically on power up.

-40 to 85 °C

CECC 90000 Quality Standard

ESD characterization according

MIL STD 883C M3015.7-HBM

Packages: PDIP24 (600 mil)

SOP24 (300 mil)

Pin Configuration

Pin Description

VCC

n.c.

Signal Name Signal Description

A0 - A8

Address Inputs

Data In/Out

DQ0 - DQ7

n.c.

PDIP

SOP

Chip Enable

Output Enable

Write Enable

Power Supply Voltage

Ground

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

VCC

VSS

Top View

December 12, 1997

12 3 4 5 6 7...11

中文翻译

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