Datasheet > U635H256S2K45

U635H256S2K45

更新时间： 2023-01-02 23:58:10

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
13页	208K
描述
Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP2-28

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U635H256S2K45 数据手册

U635H256

PowerStore 32K x 8 nvSRAM

Features

Description

The U635H256 has two separate

modes of operation: SRAM mode

and nonvolatile mode. In SRAM

mode, the memory operates as an

ordinary static RAM. In nonvolatile

operation, data is transferred in

parallel from SRAM to EEPROM or

from EEPROM to SRAM. In this

mode SRAM functions are disab-

led.

S High-performance CMOS non-

volatile static RAM 32768 x 8 bits

S 25, 35 and 45 ns Access Times

S 10, 15 and 20 ns Output Enable

Access Times

grity.

STORE cycles also may be initia-

ted under user control via a soft-

ware sequence.

Once a STORE cycle is initiated,

further input or output are disabled

until the cycle is completed.

Because a sequence of addresses

is used for STORE initiation, it is

important that no other read or

write accesses intervene in the

sequence or the sequence will be

aborted.

S I_CC= 15 mA typ. at 200 ns Cycle

Time

S Automatic STORE to EEPROM

on Power Down using system

capacitance

The U635H256 is a fast static RAM

(25, 35, 45 ns), with a nonvolatile

S Software initiated STORE

S Automatic STORE Timing

S 10⁶STORE cycles to EEPROM

S 100 years data retention in

EEPROM

electrically

erasable

PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent nonvolatile data resi-

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation) take place

automatically upon power down

using charge stored in system

capacitance. Transfers from the

EEPROM to the SRAM (the

RECALL operation) take place

automatically on power up. The

U635H256 combines the high per-

RECALL cycles may also be initia-

ted by a software sequence.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the nonvola-

tile information is transferred into

the SRAM cells.

S Automatic RECALL on Power Up

S Software RECALL Initiation

S Unlimited RECALL cycles from

EEPROM

S Single 5 V ± 10 % Operation

S Operating temperature range:

0 to 70 °C

The RECALL operation in no way

alters the data in the EEPROM

cells. The nonvolatile data can be

recalled an unlimited number of

times.

The U635H256 is pin compatible

with standard SRAMs.

-40 to 85 °C

S QS 9000 Quality Standard

S ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

S RoHS compliance and Pb- free

S Packages: PDIP28 (300 mil)

PDIP28 (600 mil)

formance and ease of use of a fast

SOP28 (330 mil)

SRAM with nonvolatile data inte-

Pin Description

Pin Configuration

A14

A12

VCC

A13

A11

Signal Name Signal Description

A0 - A14

DQ0 - DQ7

Address Inputs

Data In/Out

PDIP

SOP

Chip Enable

Output Enable

Write Enable

Power Supply Voltage

Ground

A10

VCC

VSS

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Top View

April 7, 2005

12 3 4 5 6 7...13

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与U635H256S2K45相关器件

型号	品牌	描述	获取价格	数据表
U635H256S2K45G1	SIMTEK	Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, GREEN, SOP2-28	获取价格
U635H256SC25	SIMTEK	Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.330 INCH, SOP1-28	获取价格
U635H256SC25	CYPRESS	32KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.330 INCH, SOP1-28	获取价格
U635H256SC25G1	SIMTEK	Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.330 INCH, GREEN, SOP1-28	获取价格
U635H256SC25G1	CYPRESS	32KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.330 INCH, GREEN, SOP1-28	获取价格
U635H256SC35	SIMTEK	Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDSO28, 0.330 INCH, SOP1-28	获取价格

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