U635H16
PowerStore 2K x 8 nvSRAM
Description
Features
! High-performance CMOS non-
volatile static RAM 2048 x 8 bits
! 25, 35 and 45 ns Access Times
! 12, 20 and 25 ns Output Enable
Access Times
The U635H16 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
STORE cycles also may be initia-
ted under user control via a soft-
ware sequence.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
! ICC = 15 mA at 200 ns Cycle Time operation, data is transferred in
! Automatic STORE to EEPROM
on Power Down using system
capacitance
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
! Software initiated STORE
(STORE Cycle Time < 10 ms)
! Automatic STORE Timing
! 105 STORE cycles to EEPROM
! 10 years data retention in
EEPROM
The U635H16 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
electrically
erasable
PROM
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
(EEPROM) element incorporated
in each static memory cell. The
! Automatic RECALL on Power Up SRAM can be read and written an
! Software RECALL Initiation
(RECALL Cycle Time < 20 µs)
! Unlimited RECALL cycles from
EEPROM
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation) take place
automatically upon power down
using charge stored in system
capacitance.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
! Single 5 V ± 10 % Operation
! Operating temperature ranges:
0 to 70 °C
-40 to 85 °C
! QS 9000 Quality Standard
! ESD characterization according
MIL STD 883C M3015.7-HBM
(classification see IC Code
Numbers)
Transfers from the EEPROM to the
SRAM (the RECALL operation)
take place automatically on power
up. The U635H16 combines the
high performance and ease of use
of a fast SRAM with nonvolatile
data integrity.
! Packages:PDIP24 (600 mil)
SOP24 (300 mil)
Pin Description
Pin Configuration
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
16
15
14
13
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VCC
A8
A9
W
G
Signal Name Signal Description
A0 - A10
DQ0 - DQ7
Address Inputs
Data In/Out
PDIP
SOP
24
A10
E
Chip Enable
E
Output Enable
Write Enable
Power Supply Voltage
Ground
G
W
VCC
VSS
DQ7
DQ6
DQ5
DQ4
DQ3
9
10
11
12
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1
April 20, 2004
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