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U632H64S2K25G1 PDF预览

U632H64S2K25G1

更新时间： 2024-01-18 11:39:15
品牌 Logo 应用领域
SIMTEK 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
15页 410K
描述
PowerStore 8K x 8 nvSRAM

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U632H64S2K25G1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP28,.5
针数：28Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.41
风险等级：5.32最长访问时间：25 ns
JESD-30 代码：R-PDSO-G28JESD-609代码：e3
内存密度：65536 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：28
字数：8192 words字数代码：8000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP28,.5封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：5 V
认证状态：Not Qualified座面最大高度：2.85 mm
最大待机电流：0.003 A子类别：SRAMs
最大压摆率：0.095 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：8.405 mm

U632H64S2K25G1 数据手册

 浏览型号U632H64S2K25G1的Datasheet PDF文件第2页浏览型号U632H64S2K25G1的Datasheet PDF文件第3页浏览型号U632H64S2K25G1的Datasheet PDF文件第4页浏览型号U632H64S2K25G1的Datasheet PDF文件第5页浏览型号U632H64S2K25G1的Datasheet PDF文件第6页浏览型号U632H64S2K25G1的Datasheet PDF文件第7页 
U632H64  
PowerStore 8K x 8 nvSRAM  
Not Recommended For New Designs  
Features  
Description  
‡ High-performance CMOS non-  
volatile static RAM 8192 x 8 bits  
‡ 25 ns Access Time  
‡ 12 ns Output Enable Access  
Time  
‡ ICC = 15 mA at 200 ns Cycle  
Time  
‡ Automatic STORE to EEPROM  
on Power Down using external  
capacitor  
The U632H64 has two separate ware sequence or via a single pin  
modes of operation: SRAM mode (HSB).  
and nonvolatile mode. In SRAM Once a STORE cycle is initiated,  
mode, the memory operates as an further input or output are disabled  
ordinary static RAM. In nonvolatile until the cycle is completed.  
operation, data is transferred in Because a sequence of addresses  
parallel from SRAM to EEPROM or is used for STORE initiation, it is  
from EEPROM to SRAM. In this important that no other read or  
mode SRAM functions are disab- write accesses intervene in the  
led.  
sequence or the sequence will be  
‡ Hardware or Software initiated  
STORE  
The U632H64 is a fast static RAM aborted.  
(25 ns), with a nonvolatile electri- RECALL cycles may also be initia-  
cally erasable PROM (EEPROM) ted by a software sequence.  
element incorporated in each static Internally, RECALL is a two step  
memory cell. The SRAM can be procedure. First, the SRAM data is  
read and written an unlimited num- cleared and second, the nonvola-  
ber of times, while independent tile information is transferred into  
(STORE Cycle Time < 10 ms)  
‡ Automatic STORE Timing  
‡ 105 STORE cycles to EEPROM  
‡ 10 years data retention in  
EEPROM  
‡ Automatic RECALL on Power Up nonvolatile  
data  
resides  
in the SRAM cells.  
‡ Software RECALL Initiation  
(RECALL Cycle Time < 20 μs)  
‡ Unlimited RECALL cycles from  
EEPROM  
EEPROM. Data transfers from the The RECALL operation in no way  
SRAM to the EEPROM (the alters the data in the EEPROM  
STORE operation) take place auto- cells. The nonvolatile data can be  
matically upon power down using recalled an unlimited number of  
charge stored in an external 100 times.  
μF capacitor. Transfers from the  
EEPROM to the SRAM (the  
RECALL operation) take place  
automatically on power up. The  
U632H64 combines the high per-  
‡ Single 5 V 10 % Operation  
‡ Operating temperature ranges:  
0 to 70 °C  
-40 to 85 °C  
‡ QS 9000 Quality Standard  
‡ ESD characterization according  
MIL STD 883C M3015.7-HB  
(classification see IC Code  
Numbers)  
formance and ease of use of a fast  
SRAM with nonvolatile data inte-  
grity.  
‡ RoHS compliance and Pb- free  
Package: SOP28 (330 mil)  
STORE cycles also may be initia-  
ted under user control via a soft-  
Pin Configuration  
Pin Description  
1
VCAP  
A12  
A7  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCCX  
W
2
3
Signal Name Signal Description  
HSB  
A8  
4
A6  
A0 - A12  
Address Inputs  
Data In/Out  
5
A5  
A9  
DQ0 - DQ7  
6
A4  
A11  
G
Chip Enable  
E
7
A3  
Output Enable  
Write Enable  
G
8
SOP  
A2  
A10  
E
W
9
A1  
10  
11  
12  
13  
14  
A0  
VCCX  
VSS  
VCAP  
Power Supply Voltage  
Ground  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
VSS  
Capacitor  
Hardware Controlled Store/Busy  
HSB  
Top View  
August 15, 2006  
STK Control #ML0047  
1
Rev 1.1  
1234567...15

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U632H64SC25 ETC NVRAM (EEPROM Based)

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U632H64SC25G1 CYPRESS 8KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.330 INCH, GREEN, SOP1-28

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