Datasheet > U632H16DC35

U632H16DC35

更新时间： 2024-11-08 09:58:51

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
14页	229K
描述
Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

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U632H16DC35 数据手册

U632H16

PowerStore 2K x 8 nvSRAM

Features

S High-performance CMOS non-

volatile static RAM 2048 x 8 bits

S 25, 35 and 45 ns Access Times

S 12, 20 and 25 ns Output Enable

Access Times

S Packages: PDIP28 (300 mil)

automatically on power up. The

U632H16 combines the high per-

formance and ease of use of a fast

SRAM with nonvolatile data inte-

grity.

SOP28 (300 mil)

Description

S I_CC= 15 mA at 200 ns Cycle

Time

The U632H16 has two separate STORE cycles also may be initia-

modes of operation: SRAM mode ted under user control via a soft-

and nonvolatile mode. In SRAM ware sequence or via a single pin

mode, the memory operates as an (HSB).

S Automatic STORE to EEPROM

on Power Down using external

capacitor

ordinary static RAM. In nonvolatile Once a STORE cycle is initiated,

operation, data is transferred in further input or output are disabled

parallel from SRAM to EEPROM or until the cycle is completed.

from EEPROM to SRAM. In this Because a sequence of addresses

mode SRAM functions are disab- is used for STORE initiation, it is

S Hardware or Software initiated

STORE

(STORE Cycle Time < 10 ms)

S Automatic STORE Timing

S 10⁶STORE cycles to EEPROM

S 100 years data retention in

EEPROM

led.

important that no other read or

The U632H16 is a fast static RAM write accesses intervene in the

(25, 35, 45 ns), with a nonvolatile sequence or the sequence will be

S Automatic RECALL on Power Up electrically

erasable

PROM aborted.

S Software RECALL Initiation

(RECALL Cycle Time < 20 µs)

S Unlimited RECALL cycles from

EEPROM

(EEPROM) element incorporated RECALL cycles may also be initia-

in each static memory cell. The ted by a software sequence.

SRAM can be read and written an Internally, RECALL is a two step

unlimited number of times, while procedure. First, the SRAM data is

independent nonvolatile data resi- cleared and second, the nonvola-

des in EEPROM. Data transfers tile information is transferred into

from the SRAM to the EEPROM the SRAM cells.

S Single 5 V ± 10 % Operation

S Operating temperature ranges:

0 to 70 °C

-40 to 85 °C

(the STORE operation) take place The RECALL operation in no way

automatically upon power down alters the data in the EEPROM

using charge stored in an external cells. The nonvolatile data can be

100 µF capacitor. Transfers from recalled an unlimited number of

the EEPROM to the SRAM (the times.

S QS 9000 Quality Standard

S ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

S RoHS compliance and Pb- free

RECALL operation) take place

Pin Description

Pin Configuration

VCAP

n.c.

VCCX

HSB

n.c.

Signal Name Signal Description

A0 - A10

DQ0 - DQ7

Address Inputs

Data In/Out

DQ0

DQ1

DQ2

VSS

Chip Enable

PDIP

SOP

Output Enable

Write Enable

A10

VCCX

VSS

VCAP

Power Supply Voltage

Ground

Capacitor

DQ7

DQ6

DQ5

DQ4

DQ3

Hardware Controlled Store/Busy

HSB

Top View

April 7, 2005

12 3 4 5 6 7...14

中文翻译

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与U632H16DC35相关器件

型号	品牌	获取价格	描述	数据表
U632H16DC35G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.300 INCH, GREEN, PLASTIC, DIP-28
U632H16DC45G1	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.300 INCH, GREEN, PLASTIC, DIP-28
U632H16DK25	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
U632H16DK25G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, GREEN, PLASTIC, DIP-28
U632H16DK35	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 35ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28
U632H16DK35G1	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 35ns, PDIP28, 0.300 INCH, GREEN, PLASTIC, DIP-28
U632H16DK45	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 45ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
U632H16DK45G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 45ns, CMOS, PDIP28, 0.300 INCH, GREEN, PLASTIC, DIP-28
U632H16S2C25G1	SIMTEK	获取价格	PowerStore 2K x 8 nvSRAM
U632H16S2K25G1	SIMTEK	获取价格	PowerStore 2K x 8 nvSRAM

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