Datasheet > U631H16BSC25G1

U631H16BSC25G1

更新时间： 2024-11-08 07:07:07

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
12页	207K
描述
Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, SOP-28

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中文翻译

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U631H16BSC25G1 数据手册

U631H16

SoftStore 2K x 8 nvSRAM

Features

tion), or from the EEPROM to the

SRAM (the RECALL ) operation)

are initiated through software

sequences.

! Packages: PDIP28 (300 mil)

PDIP28 (600 mil)

! High-performance CMOS nonvola-

tile static RAM 2048 x 8 bits

! 25, 35 and 45 ns Access Times

! 12, 20 and 25 ns Output Enable

Access Times

SOP28 (300 mil)

SOP24 (300 mil)

The U631H16 combines the high

performance and ease of use of a

fast SRAM with nonvolatile data

integrity.

Description

! Software STORE Initiation

(STORE Cycle Time < 10 ms)

! Automatic STORE Timing

! 10⁵STORE cycles to EEPROM

! 10 years data retention in

EEPROM

The U631H16 has two separate

modes of operation: SRAM mode

and nonvolatile mode. In SRAM

mode, the memory operates as an

ordinary static RAM. In nonvolatile

operation, data is transferred in

parallel from SRAM to EEPROM or

from EEPROM to SRAM. In this

mode SRAM functions are disab-

led.

Once a STORE cycle is initiated,

further input or output are disabled

until the cycle is completed.

Because a sequence of addresses

is used for STORE initiation, it is

important that no other read or

write accesses intervene in the

sequence or the sequence will be

aborted.

! Automatic RECALL on Power Up

! Software RECALL Initiation

(RECALL Cycle Time < 20 µs)

! Unlimited RECALL cycles from

EEPROM

! Unlimited Read and Write to

SRAM

Internally, RECALL is a two step

procedure. First, the SRAM data is

The U631H16 is a fast static RAM

(25, 35, 45 ns), with a nonvolatile

! Single 5 V ± 10 % Operation

! Operating temperature ranges:

0 to 70 °C

cleared and second, the nonvola-

tile information is transferred into

the SRAM cells.

electrically

erasable

PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent nonvolatile data resi-

des in EEPROM.

-40 to 85 °C

The RECALL operation in no way

alters the data in the EEPROM

cells. The nonvolatile data can be

recalled an unlimited number of

times.

! QS 9000 Quality Standard

! ESD characterization according

! MIL STD 883C M3015.7-HBM

(classification see IC Code

Numbers)

Data transfers from the SRAM to

the EEPROM (the STORE opera-

Pin Description

Pin Configuration

n.c.

VCC

n.c.

DQ0

DQ1

DQ2

VSS

VCC

Signal Name Signal Description

A0 - A10

DQ0 - DQ7

Address Inputs

Data In/Out

PDIP

SOP

A10

SOP

Chip Enable

A10

Output Enable

Write Enable

Power Supply Voltage

Ground

VCC

VSS

DQ7

DQ6

DQ5

DQ4

DQ3

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Top View

April 20, 2004

12 3 4 5 6 7...12

中文翻译

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与U631H16BSC25G1相关器件

型号	品牌	获取价格	描述	数据表
U631H16BSC35	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 35ns, PDSO28, 0.300 INCH, SOP-28
U631H16BSC35G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, SOP-28
U631H16BSC35G1	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 35ns, PDSO28, 0.300 INCH, LEAD FREE, SOP-28
U631H16BSC45	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.300 INCH, SOP-28
U631H16BSC45G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 45ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, SOP-28
U631H16BSC45G1	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.300 INCH, LEAD FREE, SOP-28
U631H16BSK25	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.300 INCH, SOP-28
U631H16BSK25G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, SOP-28
U631H16BSK35	CYPRESS	获取价格	2KX8 NON-VOLATILE SRAM, 35ns, PDSO28, 0.300 INCH, SOP-28
U631H16BSK35G1	SIMTEK	获取价格	Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, SOP-28

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