Datasheet > U630H16BDC35

U630H16BDC35

更新时间： 2023-01-02 14:24:52

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
14页	225K
描述
Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

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U630H16BDC35 数据手册

U630H16

HardStore 2K x 8 nvSRAM

Features

Description

! High-performance CMOS nonvo-

latile static RAM 2048 x 8 bits

! 25, 35 and 45 ns Access Times

! 12, 20 and 25 ns Output Enable

Access Times

The U630H16 has two separate

modes of operation: SRAM mode

and nonvolatile mode, determined

by the state of the NE pin.

further input or output are disabled

until the cycle is completed.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the nonvola-

tile information is transferred into

the SRAM cells.

In SRAM mode, the memory ope-

rates as an ordinary static RAM. In

nonvolatile operation, data is trans-

ferred in parallel from SRAM to

EEPROM or from EEPROM to

SRAM. In this mode SRAM

functions are disabled.

! Hardware STORE Initiation

(STORE Cycle Time < 10 ms)

! Automatic STORE Timing

! 10⁵STORE cycles to EEPROM

! 10 years data retention in

EEPROM

The RECALL operation in no way

alters the data in the EEPROM

cells. The nonvolatile data can be

recalled an unlimited number of

times.

! Automatic RECALL on Power Up The U630H16 is a fast static RAM

! Hardware RECALL Initiation

(RECALL Cycle Time < 20 µs)

! Unlimited RECALL cycles from

EEPROM

(25, 35, 45 ns), with a nonvolatile

electrically erasable PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent nonvolatile data resi-

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation), or from the

EEPROM to the SRAM (the

RECALL operation) are initiated

through the state of the NE pin.

The U630H16 combines the high

performance and ease of use of a

fast SRAM with nonvolatile data

integrity.

! Unlimited Read and Write to

SRAM

! Single 5 V ± 10 % Operation

! Operating temperature ranges:

0 to 70 °C

-40 to 85 °C

-40 to 125 °C (only 35 ns)

! QS 9000 Quality Standard

! ESD characterization according

MIL STD 883C M3015.7-HBM

(classification see IC Code Num-

bers)

! Packages:SOP28 (300 mil),

PDIP28 (300/600 mil,

Once a STORE cycle is initiated,

only C/K-Type)

Pin Configuration

Pin Description

n.c.

VCC

n.c.

Signal Name Signal Description

A0 - A10

DQ0 - DQ7

Address Inputs

Data In/Out

Chip Enable

PDIP

SOP

Output Enable

Write Enable

A10

VCC

VSS

Nonvolatile Enable

Power Supply Voltage

Ground

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Top View

April 20, 2004

12 3 4 5 6 7...14

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与U630H16BDC35相关器件

型号	品牌	描述	获取价格	数据表
U630H16BDC35G1	SIMTEK	Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28	获取价格
U630H16BDC45	SIMTEK	2KX8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28	获取价格
U630H16BDC45G1	SIMTEK	Non-Volatile SRAM, 2KX8, 45ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28	获取价格
U630H16BDK25	SIMTEK	Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	获取价格
U630H16BDK25G1	SIMTEK	Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28	获取价格
U630H16BDK35G1	SIMTEK	Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.300 INCH, LEAD FREE, PLASTIC, DIP-28	获取价格

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