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U440

更新时间: 2024-02-20 14:16:46
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描述
Linear Systems replaces discontinued Siliconix U440

U440 数据手册

  
U440  
MONOLITHIC DUAL  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U440  
The U440 is a tightly matched Monolithic Dual N-Channel JFET  
FEATURES  
The U440 are monolithic dual JFETs mounted in a  
Direct Replacement for SILICONIX U440  
HIGH CMRR  
single TO-71 package. The monolithic dual chip design  
reduces parasitics and gives better performance at very  
high frequencies while ensuring extremely tight  
matching. These devices are an excellent choice for  
use as wideband differential amplifiers in demanding  
test and measurement applications. The U440 is a  
direct replacement for discontinued Siliconix U440.  
CMRR 85dB  
IGSS 1 pA  
LOW GATE LEAKAGE  
ABSOLUTE MAXIMUM RATINGS 1  
@ 25°C (unless otherwise noted)  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (Total)  
Maximum Currents  
65°C to +150°C  
55°C to +135°C  
The hermetically sealed TO-71 is well suited for military  
applications.  
500mW  
(See Packaging Information).  
Gate Current  
50mA  
U440 Applications:  
Maximum Voltages  
Gate to Drain  
Gate to Source  
ƒ
ƒ
Wideband Differential Amps  
High-Speed,Temp-Compensated Single-  
Ended Input Amps  
25V  
25V  
±50V  
Gate to Gate  
ƒ
ƒ
High-Speed Comparators  
Impedance Converters and vibrations  
detectors.  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  
SYMBOL  
|VGS1 VGS2  
CHARACTERISTIC  
Differential Gate to Source Cutoff Voltage  
MIN  
TYP  
MAX  
10  
UNITS  
mV  
CONDITIONS  
VDG = 10V, ID = 5mA  
|
|VGS1 – VGS2 | / T  
Differential Gate to Source Cutoff  
Voltage Change with Temperature  
Gate to Source Saturation Current Ratio  
20  
µV/°C  
VDG = 10V, ID = 5mA  
TA = 55°C to +125°C  
VDS = 10V, VGS = 0V  
IDSS1 / IDSS2  
0.07  
%
2
Click To Buy  
Gfs1 / Gfs2  
Forward Transconductance Ratio  
0.97  
%
VDS = 10V, ID = 5mA, f = 1kHz  
CMRR  
Common Mode Rejection Ratio  
85  
dB  
VDG = 5 to 10V, ID = 5mA  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
IDSS  
IGSS  
IG  
CHARACTERISTICS  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Saturation Current  
Gate Leakage Current3  
MIN.  
25  
1  
TYP.  
MAX.  
UNITS  
V
V
mA  
pA  
pA  
CONDITIONS  
IG = 1µA, VDS = 0V  
VDS = 10V, ID = 1nA  
VDS = 10V, VGS = 0V  
VGS = 15V, VDS = 0V  
VDG = 10V, ID = 5mA  
3.5  
15  
1  
6  
30  
500  
500  
6
Gate Operating Current  
1  
gfs  
gos  
CISS  
CRSS  
en  
Forward Transconductance  
Output Conductance  
Input Capacitance  
Reverse Transfer Capacitance  
Equivalent Input Noise Voltage  
4.5  
6
70  
3
1
4
9
200  
mS  
µS  
pF  
pF  
nV/Hz  
VDS = 10V, ID= 5mA, f = 1kHz  
VDS = 10V, ID = 5mA, f = 1MHz  
VDS = 10V, ID = 5mA, f = 10kHz  
Notes:  
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired  
2. Pulse Test: PW 300µs Duty Cycle 3%  
TO-71 (Top View)  
3. Assumes smaller value in numerator  
Available Packages:  
U440 in TO-71  
U440 available as bare die  
Please contact Micross for full package and die dimensions:  
Email: chipcomponents@micross.com  
Web: www.micross.com/distribution.aspx  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  

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