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U430 PDF预览

U430

更新时间: 2024-09-30 22:18:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 54K
描述
Matched N-Channel Pairs

U430 数据手册

 浏览型号U430的Datasheet PDF文件第2页浏览型号U430的Datasheet PDF文件第3页浏览型号U430的Datasheet PDF文件第4页浏览型号U430的Datasheet PDF文件第5页浏览型号U430的Datasheet PDF文件第6页 
U430/431  
Vishay Siliconix  
Matched N-Channel Pairs  
PRODUCT SUMMARY  
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV)  
U430  
U431  
–1 to –4  
–2 to –6  
–25  
–25  
10  
10  
–15  
–15  
25  
25  
FEATURES  
BENEFITS  
APPLICATIONS  
D Two-Chip Design  
D High Slew Rate  
D Tight Differential Match vs. Current  
D Wideband Differential Amps  
D Improved Op Amp Speed, Settling Time Accuracy D High-Speed, Temp-Compensated,  
Single-Ended Input Amps  
D Low Offset/Drift Voltage  
D Minimum Input Error/Trimming Requirement  
D High-Speed Comparators  
D Low Gate Leakage: 15 pA D Insignificant Signal Loss/Error Voltage  
D Impedance Converters  
D Low Noise  
D High System Sensitivity  
D High CMRR: 75 dB  
D Minimum Error with Large Input Signals  
DESCRIPTION  
The U430/431 are matched JFET pairs assembled in a TO-78  
package. These devices offer good power gain even at  
frequencies beyond 250 MHz.  
The TO-78 package is available with full military processing  
(see Military Information).  
For similar products, see the low-noise U/SST401 series, the  
high-gain 2N5911/5912, and the low-leakage U421/423 data  
sheets.  
TO-78  
S
S
2
1
1
3
7
G
1
G
2
6
2
5
D
1
D
2
4
Case  
Top View  
ABSOLUTE MAXIMUM RATINGS  
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA  
Power Dissipation :  
Notes  
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 300 mW  
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C  
16  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a. Derate 2.4 mW/_C above 25_C  
b. Derate 4 mW/_C above 25_C  
Document Number: 70249  
S-04031—Rev. E, 04-Jun-01  
www.vishay.com  
8-1  

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