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U423_SOT-23

更新时间： 2024-09-17 08:25:31
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high input impedance Monolithic Dual N-Channel JFET

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U423_SOT-23 数据手册

  
U423  
HIGH INPUT IMPEDANCE  
MONOLITHIC DUAL  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U423  
The U423 is a high input impedance Monolithic Dual N-Channel JFET  
FEATURES  
HIGH INPUT IMPEDANCE  
HIGH GAIN  
LOW POWER OPERATION  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
The U423 monolithic dual n-channel JFET is designed  
to provide very high input impedance for differential  
amplification and impedance matching. Among its  
many unique features, this series offers operating gate  
current specified at -250 fA. The U423 is a direct  
replacement for discontinued Siliconix U423.  
IG = 0.25pA MAX  
gfs = 120µmho MIN  
VGS(OFF) = 2V MAX  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
The 6 Pin SOT-23 package provides ease of  
manufacturing, and a lower cost assembly option.  
‐65°C to +150°C  
+150°C  
(See Packaging Information).  
Maximum Voltage and Current for Each Transistor – Note 1  
‐VGSS  
‐VDSO  
‐IG(f)  
Gate Voltage to Drain or Source  
Drain to Source Voltage  
Gate Forward Current  
40V  
40V  
10mA  
Maximum Power Dissipation  
Device Dissipation @ Free Air – Total  
U423 Applications:  
400mW @ +125°C  
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED  
ƒ
ƒ
ƒ
Ultra Low Input Current Differential Amps  
High-Speed Comparators  
Impedance Converters  
SYMBOL  
CHARACTERISTICS VALUE UNITS CONDITIONS  
|∆V GS1‐2 /∆T|max.  
DRIFT VS.  
TEMPERATURE  
OFFSET VOLTAGE  
40  
µV/°C  
VDG=10V, ID=30µA  
TA=‐55°C to +125°C  
VDG=10V, ID=30µA  
| V GS1‐2 | max.  
25  
mV  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
BVGGO  
CHARACTERISTICS  
Breakdown Voltage  
Gate‐To‐Gate Breakdown  
TRANSCONDUCTANCE  
Full Conduction  
MIN.  
40  
40  
TYP.  
60  
‐‐  
MAX.  
‐‐  
‐‐  
UNITS  
V
V
CONDITIONS  
VDS = 0 IG =1nA  
IG = 1µA ID = 0 IS= 0  
YfSS  
YfS  
300  
120  
‐‐  
200  
1500  
350  
µmho  
µmho  
VDS = 10V  
VDG = 10V  
VGS = 0V f = 1kHz  
ID = 30µA f = 1kHz  
Typical Operation  
DRAIN CURRENT  
Click To Buy  
IDSS  
Full Conduction  
GATE VOLTAGE  
Pinchoff voltage  
Operating Range  
GATE CURRENT  
Operating  
60  
‐‐  
1000  
µA  
VDS = 10V  
VGS = 0V  
VGS(off)  
VGS  
‐‐  
‐‐  
‐‐  
‐‐  
2.0  
1.8  
V
V
VDS = 10V  
VDG = 10V  
ID = 1nA  
ID = 30µA  
IGmax.  
‐IGmax.  
IGSSmax.  
‐IGSSmax.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
.25  
250  
1.0  
1.0  
pA  
pA  
pA  
nA  
VDG = 10V  
ID = 30µA  
VGS = 20V  
High Temperature  
At Full Conduction  
High Temperature  
OUTPUT CONDUCTANCE  
Full Conduction  
Operating  
TA = +125°C  
VDS = 0V  
TA = +125°C  
YOSS  
YOS  
‐‐  
‐‐  
‐‐  
0.1  
10  
3.0  
µmho  
µmho  
VDS = 10V  
VGS = 0V  
ID = 30µA  
VDG = 10V  
COMMON MODE REJECTION  
‐20 log | ∆V GS1‐2/ ∆VDS|  
‐20 log | ∆V GS1‐2/ ∆VDS|  
NOISE  
CMR  
‐‐  
‐‐  
90  
90  
‐‐  
‐‐  
dB  
dB  
∆VDS = 10 to 20V  
∆VDS = 5 to 10V  
VDG = 10V ID = 30µA RG = 10MΩ  
f = 10Hz  
VDG = 10V ID = 30µA f = 10Hz  
VDG = 10V ID = 30µA f = 1KHz  
ID = 30µA  
ID = 30µA  
NF  
en  
Figure  
Voltage  
‐‐  
‐‐  
‐‐  
‐‐  
20  
10  
1
70  
‐‐  
dB  
nV/√Hz  
CAPACITANCE  
Input  
Reverse Transfer  
CISS  
CRSS  
‐‐  
‐‐  
‐‐  
‐‐  
3.0  
1.5  
pF  
pF  
VDS= 10V  
VGS = 0 f = 1MHz  
Micross Components Europe  
Available Packages:  
LSU423 in SOT-23  
LSU423 available as bare die  
Please contact Micross for full package and die dimensions  
Email: chipcomponents@micross.com  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
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