5秒后页面跳转
捷配首页

Datasheet > U423_SOIC
U423_SOIC PDF预览

U423_SOIC

更新时间： 2024-11-07 08:25:31
品牌 Logo 应用领域
MICROSS /
页数 文件大小 规格书
1页 271K
描述
high input impedance Monolithic Dual N-Channel JFET

阅读下载

中文翻译

获取价格

U423_SOIC 数据手册

  
U423  
HIGH INPUT IMPEDANCE  
MONOLITHIC DUAL  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U423  
The U423 is a high input impedance Monolithic Dual N-Channel JFET  
FEATURES  
HIGH INPUT IMPEDANCE  
HIGH GAIN  
LOW POWER OPERATION  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
The U423 monolithic dual n-channel JFET is designed  
to provide very high input impedance for differential  
amplification and impedance matching. Among its  
many unique features, this series offers operating gate  
current specified at -250 fA. The U423 is a direct  
replacement for discontinued Siliconix U423.  
IG = 0.25pA MAX  
gfs = 120µmho MIN  
VGS(OFF) = 2V MAX  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
The hermetically sealed TO-71 & TO-78 packages are  
well suited for military applications. The 8 Pin P-DIP  
and 8 Pin SOIC provide ease of manufacturing, and the  
symmetrical pinout prevents improper orientation.  
‐65°C to +150°C  
+150°C  
Maximum Voltage and Current for Each Transistor – Note 1  
‐VGSS  
‐VDSO  
‐IG(f)  
Gate Voltage to Drain or Source  
Drain to Source Voltage  
Gate Forward Current  
40V  
40V  
10mA  
(See Packaging Information).  
Maximum Power Dissipation  
Device Dissipation @ Free Air – Total  
U423 Applications:  
400mW @ +125°C  
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED  
ƒ
ƒ
ƒ
Ultra Low Input Current Differential Amps  
High-Speed Comparators  
Impedance Converters  
SYMBOL  
CHARACTERISTICS VALUE UNITS CONDITIONS  
|∆V GS1‐2 /∆T|max.  
DRIFT VS.  
TEMPERATURE  
OFFSET VOLTAGE  
40  
µV/°C  
VDG=10V, ID=30µA  
TA=‐55°C to +125°C  
VDG=10V, ID=30µA  
| V GS1‐2 | max.  
25  
mV  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
BVGGO  
CHARACTERISTICS  
Breakdown Voltage  
Gate‐To‐Gate Breakdown  
TRANSCONDUCTANCE  
Full Conduction  
MIN.  
40  
40  
TYP.  
60  
‐‐  
MAX.  
‐‐  
‐‐  
UNITS  
V
V
CONDITIONS  
VDS = 0 IG =1nA  
IG = 1µA ID = 0 IS= 0  
YfSS  
YfS  
300  
120  
‐‐  
200  
1500  
350  
µmho  
µmho  
VDS = 10V  
VDG = 10V  
VGS = 0V f = 1kHz  
ID = 30µA f = 1kHz  
Typical Operation  
DRAIN CURRENT  
Click To Buy  
IDSS  
Full Conduction  
GATE VOLTAGE  
Pinchoff voltage  
Operating Range  
GATE CURRENT  
Operating  
60  
‐‐  
1000  
µA  
VDS = 10V  
VGS = 0V  
VGS(off)  
VGS  
‐‐  
‐‐  
‐‐  
‐‐  
2.0  
1.8  
V
V
VDS = 10V  
VDG = 10V  
ID = 1nA  
ID = 30µA  
IGmax.  
‐IGmax.  
IGSSmax.  
‐IGSSmax.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
.25  
250  
1.0  
1.0  
pA  
pA  
pA  
nA  
VDG = 10V  
ID = 30µA  
VGS = 20V  
High Temperature  
At Full Conduction  
High Temperature  
OUTPUT CONDUCTANCE  
Full Conduction  
Operating  
TA = +125°C  
VDS = 0V  
TA = +125°C  
YOSS  
YOS  
‐‐  
‐‐  
‐‐  
0.1  
10  
3.0  
µmho  
µmho  
VDS = 10V  
VGS = 0V  
ID = 30µA  
VDG = 10V  
COMMON MODE REJECTION  
‐20 log | ∆V GS1‐2/ ∆VDS|  
‐20 log | ∆V GS1‐2/ ∆VDS|  
NOISE  
CMR  
‐‐  
‐‐  
90  
90  
‐‐  
‐‐  
dB  
dB  
∆VDS = 10 to 20V  
∆VDS = 5 to 10V  
VDG = 10V ID = 30µA RG = 10MΩ  
f = 10Hz  
VDG = 10V ID = 30µA f = 10Hz  
VDG = 10V ID = 30µA f = 1KHz  
ID = 30µA  
ID = 30µA  
NF  
en  
Figure  
Voltage  
‐‐  
‐‐  
‐‐  
‐‐  
20  
10  
1
70  
‐‐  
dB  
nV/√Hz  
CAPACITANCE  
Input  
Reverse Transfer  
CISS  
CRSS  
‐‐  
‐‐  
‐‐  
‐‐  
3.0  
1.5  
pF  
pF  
VDS= 10V  
VGS = 0 f = 1MHz  
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired  
TO-71 / TO-78 (Top View)  
P-DIP / SOIC (Top View)  
Available Packages:  
U423 in TO-71 & TO-78  
U423 in PDIP & SOIC  
U423 available as bare die  
Please contact Micross for full package and die dimensions  
Email: chipcomponents@micross.com  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
1

中文翻译

下载PDF

与U423_SOIC相关器件

型号 品牌 获取价格 描述 数据表
U423_SOT-23 MICROSS

获取价格

 		high input impedance Monolithic Dual N-Channel JFET
U423_TO-71 MICROSS

获取价格

 		high input impedance Monolithic Dual N-Channel JFET
U423_TO-78 MICROSS

获取价格

 		a high input impedance Monolithic Dual N-Channel JFET
U423-E3 VISHAY

获取价格

 		Small Signal Field-Effect Transistor, N-Channel, Junction FET
U424 MICROSS

获取价格

 		Linear Systems replaces discontinued Siliconix U424
U424 CALOGIC

获取价格

 		N-Channel Dual JFET
U424_PDIP MICROSS

获取价格

 		a high input impedance Monolithic Dual N-Channel JFET
U424_SOIC MICROSS

获取价格

 		a high input impedance Monolithic Dual N-Channel JFET
U424_TO-71 MICROSS

获取价格

 		a high input impedance Monolithic Dual N-Channel JFET
U424_TO-78 MICROSS

获取价格

 		a high input impedance Monolithic Dual N-Channel JFET

与U423_SOIC相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证