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U20D40D PDF预览

U20D40D

更新时间: 2024-11-27 12:56:43
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THINKISEMI /
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2页 626K
描述
20 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diodes

U20D40D 数据手册

 浏览型号U20D40D的Datasheet PDF文件第2页 
U20D20D thru U20D60D  
®
U20D20D/U20D40D/U20D60D  
Pb Free Plating Product  
20 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diodes  
Unit: inch (mm)  
TO-3P/TO-247AD  
Features  
.640(16.25)  
.620(15.75)  
.199(5.05)  
.175(4.45)  
Dual rectifier construction, positive center-tap  
.142(3.6)  
.125(3.2)  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V0  
Glass passivated chip junctions  
Superfast recovery time, high voltage  
Low forward voltage, high current capability  
Low thermal resistance  
Low power loss, high efficiency  
.095(2.4)  
High temperature soldering guaranteed:  
o
.126(3.2)  
260 C, 0.16”(4.06mm)from case for 10 seconds  
.110(2.8)  
.050(1.25)  
.045(1.15)  
Mechanical Data  
.030(0.75)  
.017(0.45)  
Cases: TO-3P/TO-247AD molded plastic  
Terminals: Pure tin plated, lead free solderable per  
MIL-STD-750. Method 2026  
.225(5.7)  
.204(5.2)  
.225(5.7)  
.204(5.2)  
Polarity: As marked  
Case  
Case  
Case  
Case  
Mounting position: Any  
Mounting torque: 10in-lbs. Max.  
Weight: 6.5 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "S"  
Reverse Doubler  
Negative  
Positive  
Suffix "C"  
Suffix "A"  
Suffix "D"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
U20D20D U20D40D U20D60D  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=125oC  
20.0  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
200  
175  
Maximum Instantaneous Forward Voltage  
@ 10.0 A  
VF  
IR  
0.98  
1.3  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
5.0  
100  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35  
pF  
oC  
120  
70  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions I  
F
= 0.5A, I  
R
= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  

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