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U20D10C-LF PDF预览

U20D10C-LF

更新时间: 2024-11-27 09:16:35
品牌 Logo 应用领域
WTE /
页数 文件大小 规格书
4页 44K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-3P, 3 PIN

U20D10C-LF 数据手册

 浏览型号U20D10C-LF的Datasheet PDF文件第2页浏览型号U20D10C-LF的Datasheet PDF文件第3页浏览型号U20D10C-LF的Datasheet PDF文件第4页 
®
U20D05C – U20D60C  
20A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
H
Superfast 35nS and 50nS Recovery Time  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
TO-3P  
Dim  
A
B
C
D
E
Min  
1.85  
4.70  
Max  
2.15  
5.30  
23.00  
S
R
L
J
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
K
19.00  
2.80  
0.45  
PIN1  
2
3
3.20  
0.85  
16.20  
2.70  
3.65 Ø  
4.50  
5.65  
1.40  
2.50  
12.70  
6.00  
P
G
H
J
1.70  
3.15 Ø  
Mechanical Data  
N
K
L
Case: TO-3P, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: See Diagram  
Weight: 5.6 grams (approx.)  
M
N
P
5.25  
1.10  
M
A
R
S
11.70  
5.00  
B
All Dimensions in mm  
Mounting Position: Any  
Mounting Torque: 1.2 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
C
PIN 1  
PIN 3  
PIN 2  
Case  
G
D
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
U20D U20D U20D U20D U20D U20D U20D U20D  
Characteristic  
Symbol  
Unit  
05C  
10C  
15C  
20C  
30C  
40C  
50D  
60C  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
150  
200  
300  
400  
500  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
105  
140  
210  
280  
350  
420  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
20  
10  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
200  
A
Forward Voltage per diode  
@IF = 10A  
VFM  
IRM  
0.975  
1.3  
1.7  
70  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
120  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
40  
1.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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