Datasheet > U1ZB36(TE12L,Q)

U1ZB36(TE12L,Q)

更新时间： 2024-11-27 10:29:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	227K
描述
Trans Voltage Suppressor Diode

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中文翻译

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数据手册

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U1ZB36(TE12L,Q) 数据手册

U1ZB6.8~U1ZB390

TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE

U1ZB6.8~U1ZB390

Unit: mm

CONSTANT VOLTAGE REGULATION

TRANSIENT SUPPRESSORS

z Average Power Dissipation : P = 1.0 W

z Zener Voltage

: V = 6.8 V to 390 V

z Surface Mounting Plastic Mold Package

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

Power Dissipation

SYMBOL

RATING

UNIT

1.0

°C

Junction Temperature

−40 to 150

Storage Temperature Range

stg

JEDEC

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

JEITA

TOSHIBA

Weight: 0.06g

3−4D1A

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

STANDARD SOLDERING PAD

2011-01-05

12 3 4 5 6 7

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