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U12C40D PDF预览

U12C40D

更新时间: 2024-02-29 00:09:35
品牌 Logo 应用领域
THINKISEMI 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 268K
描述
12.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifiers

U12C40D 技术参数

生命周期:Contact Manufacturer包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.18
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ANODE AND CATHODE配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:100 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:400 V
最大反向电流:5 µA最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

U12C40D 数据手册

 浏览型号U12C40D的Datasheet PDF文件第2页 
U12C20D thru U12C60D  
U12C20D/U12C40D/U12C60D  
Pb Free Plating Product  
12.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifiers  
TO-220AB(TO-220-3L)  
Unit:inch(mm)  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.038(0.96)  
.025(0.65)MAX  
.019(0.50)  
Mechanical Data  
Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
Case  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "D"  
Tandem Polarity  
Suffix "S"  
Common Cathode  
Suffix "C"  
Common Anode  
Suffix "A"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
U12C20C  
U12C20A  
U12C20D  
U12C20S  
U12C40C  
U12C60C  
U12C40A  
U12C40D  
U12C40S  
U12C60A  
U12C60D  
U12C60S  
PARAMETER  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100°C  
12.0  
100  
1.3  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x6.0A=12.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@6.0A  
0.98  
1.7  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25°C  
At Rated DC Blocking Voltage @TJ=125°C  
5.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35  
65  
Trr  
CJ  
nS  
pF  
1.5  
RθJC  
°C/W  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
TJ,TSTG  
°C  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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