TZMB6V2

更新时间： 2024-11-14 22:27:15

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
6页	78K
描述
Silicon Epitaxial Planar Z-Diodes

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中文翻译

获取价格

数据手册

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TZMB6V2 数据手册

TZMB...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Available with tighter tolerances

Very high stability

Low noise

V –tolerance ± 2%

94 9371

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

Type

Symbol

Value

500

Unit

300K/W

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on PC board 50mmx50mmx1.6mm

Symbol

thJA

Value

500

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85610

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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TZMB6V8GS18	VISHAY	获取价格	Zener Diode, 6.8V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, MINIMELF-2