Datasheet > TYN40Y-800T

TYN40Y-800T

更新时间： 2024-09-26 17:01:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	465K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in IITO220 internally insulated plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).

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TYN40Y-800T 数据手册

TYN40Y-800T

SCR

Rev.02 - 14 October 2022

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer (SCR) in IITO220 internally insulated plastic package

intended for use in applications requiring very high inrush current capability, high thermal cycling

performance and high junction temperature capability (T_j(max)= 150 °C).

2. Features and beneﬁts

• High junction operating temperature capability (T_j(max)= 150 °C)

• High bidirectional blocking voltage capability

• Very high current surge capability

• High thermal cycling performance

• Planar passivated for voltage ruggedness and reliability

• Internally insulated package

• Isolated mounting base with 2500 V (RMS) isolation

3. Applications

• High voltage capability

• Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment

• Capacitive Discharge Ignition (CDI)

• Crowbar protection

• Inrush protection

• Motor control

• Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

800

RMS on-state current

half sine wave; T_mb≤ 97 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

450

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

495

-40 to 150

Typ

°C

T_j

junction temperature

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max Unit

I_GT

I_H

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

V_D= 12 V; T_j= 25 °C; Fig. 9

holding current

on-state voltage

V_T

I_T= 80 A; T_j= 25 °C; Fig. 10

1.60

Dynamic characteristics

dV_D/dt rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform;

gate open circuit

500

V/μs

12 3 4 5 6 7...11

中文翻译

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