Datasheet > TYN30B-600TF

TYN30B-600TF

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	461K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TYN30B-600TF 数据手册

TYN30B-600TF

SCR

Rev.01 - 23 January 2024

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer (SCR) in a TO263 (D2PAK) surface mountable plastic

package intended for use in applications applications requiring good bidirectional blocking voltage

and high surge current capability and high junction temperature capability (T_j(max)= 150 °C)

2. Features and beneﬁts

• High junction operating temperature capability (T_j(max)= 150 °C)

• High bidirectional blocking voltage capability

• Very high current surge capability

• High thermal cycling performance

• Planar passivated for voltage ruggedness and reliability

3. Applications

• Capacitive Discharge Ignition (CDI)

• Crowbar protection

• Inrush protection

• Motor control

• Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

600

RMS on-state current

half sine wave; T_mb≤ 132 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

360

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

396

150

Typ

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

Unit

I_GT

I_H

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

V_D= 12 V; T_j= 25 °C; Fig. 9

holding current

on-state voltage

V_T

I_T= 30 A; T_j= 25 °C; Fig. 10

1.50

Dynamic characteristics

dV_D/dt rate of rise of oﬀ-state

voltage

V_DM= 402 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate open

circuit

500

V/μs

12 3 4 5 6 7...11

中文翻译

下载PDF

与TYN30B-600TF相关器件

型号	品牌	获取价格	描述	数据表
TYN30B-800T	WEEN	获取价格	Planar passivated Silicon Controlled Rectifie
TYN30H-800C	JJM	获取价格	标准型单向可控硅
TYN30W-800T	WEEN	获取价格	Planar passivated Silicon Controlled Rectifie
TYN30Y-600TF	WEEN	获取价格	Planar passivated Silicon Controlled Rectifie
TYN30Y-800T	WEEN	获取价格	Planar passivated Silicon Controlled Rectifie
TYN40	STMICROELECTRONICS	获取价格	THYRISTORS
TYN404	STMICROELECTRONICS	获取价格	THYRISTORS
TYN404/F2	STMICROELECTRONICS	获取价格	4A, 400V, SCR, TO-220, TO-220, 3 PIN
TYN404/F5	STMICROELECTRONICS	获取价格	4A, 400V, SCR, TO-220, TO-220, 3 PIN
TYN406	STMICROELECTRONICS	获取价格	Silicon controlled rectifiers