Datasheet > TYN16X-600CTN

TYN16X-600CTN

更新时间： 2024-06-27 12:11:04

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	1123K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)

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TYN16X-600CTN 数据手册

TYN16X-600CTN

SCR

Product data sheet

Rev.01 - 24 October 2016

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic

package intended for use in applications requiring high thermal cycling performance and high

junction temperature capability (T_j(max)= 150 °C).

2. Features and benefits

•

High junction operating temperature capability

•

High thermal cycling performance

High voltage capability

Planar passivated for voltage ruggedness and reliability

3. Applications

•

Ignition circuits

Motor control

Protection circuits e.g. SMPS inrush current

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak off-

state voltage

600

V_RRM

I_TSM

repetitive peak reverse

voltage

600

180

198

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

T_j

junction temperature

150

°C

I_T(AV)

average on-state

current

half sine wave; T_h≤ 81 °C; Fig. 1

10.2

I_T(RMS)

RMS on-state current

half sine wave; T_h≤ 81 °C; Fig. 2;

Fig. 3

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

3.5

Dynamic characteristics

12 3 4 5 6 7...12

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