Datasheet > TYN16X-600CTF

TYN16X-600CTF

更新时间： 2024-04-09 19:00:32

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	469K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220F plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).

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TYN16X-600CTF 数据手册

TYN16X-600CTF

SCR

Rev.03 - 29 January 2023

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer (SCR) in a TO220F plastic package intended for use

in applications requiring very high inrush current capability, high thermal cycling performance and

high junction temperature capability (T_j(max)= 150 °C).

2. Features and beneﬁts

• High junction operating temperature capability (T_j(max)= 150 °C)

• Good blocking voltage capability

• High surge current capability

• Isolated mounting base package

• Planar passivated for voltage ruggedness and reliability

3. Applications

• Capacitive Discharge Ignition (CDI)

• Crowbar protection

• Inrush protection

• Motor control

• Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

600

RMS on-state current

half sine wave; T_h≤ 85 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig 4; Fig 5

188

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

207

150

T_j

junction temperature

°C

Static characteristics

I_GTgate trigger current

I_H

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

V_D= 12 V; T_j= 25 °C; Fig. 9

holding current

on-state voltage

1.6

V_T

I_T= 16 A; T_j= 25 °C; Fig. 10

Dynamic characteristics

dV_D/dt rate of rise of oﬀ-state

voltage

V_DM= 402 V; T_j= 150 °C; (V_DM= 67% of V_DRM);

exponential waveform; gate open circuit

400

V/μs

12 3 4 5 6 7...11

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