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TXS0102DCUT PDF预览

TXS0102DCUT

更新时间: 2024-11-27 08:31:51
品牌 Logo 应用领域
德州仪器 - TI 驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
23页 705K
描述
2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

TXS0102DCUT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:VSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:0.55Is Samacsys:N
接口集成电路类型:INTERFACE CIRCUITJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:2.3 mm
湿度敏感等级:1位数:2
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:TSSOP8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:1.8/3.3,2.5/5 V
认证状态:Not Qualified座面最大高度:0.9 mm
子类别:Other Interface ICs最大压摆率:0.01 mA
最大供电电压:3.6 V最小供电电压:1.65 V
标称供电电压:1.8 V电源电压1-最大:5.5 V
电源电压1-分钟:2.3 V电源电压1-Nom:2.5 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2 mm
Base Number Matches:1

TXS0102DCUT 数据手册

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TXS0102  
www.ti.com  
SCES640D JANUARY 2007REVISED MARCH 2011  
2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR  
FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS  
Check for Samples: TXS0102  
1
FEATURES  
TYPICAL LEVEL-SHIFTER  
APPLICATIONS  
2
No Direction-Control Signal Needed  
Max Data Rates  
I2C/SMBus  
UART  
24 Mbps (Push Pull)  
2 Mbps (Open Drain)  
GPIO  
Available in the Texas Instruments NanoStar  
Package  
DCT OR DCU PACKAGE  
(TOP VIEW)  
1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on  
B1  
1
2
3
4
8
7
6
5
B2  
B port (VCCA VCCB  
)
VCC Isolation Feature If Either VCC Input Is at  
GND, Both Ports Are in the High-Impedance  
State  
GND  
VCCA  
A2  
VCCB  
OE  
A1  
No Power-Supply Sequencing Required –  
Either VCCA or VCCB Can Be Ramped First  
DQE OR DQM PACKAGE  
(TOP VIEW)  
Ioff Supports Partial-Power-Down Mode  
Operation  
1
2
3
4
8
7
6
5
VCCA  
A1  
VCCB  
B1  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
A2  
B2  
ESD Protection Exceeds JESD 22  
GND  
OE  
A Port  
YZP PACKAGE  
(BOTTOM VIEW)  
2500-V Human-Body Model (A114-B)  
250-V Machine Model (A115-A)  
D1  
C1  
B1  
A1  
D2  
C2  
B2  
A2  
4 5  
3 6  
2 7  
1 8  
A2  
A1  
1500-V Charged-Device Model (C101)  
VCCA  
OE  
B Port  
VCCB  
GND  
B2  
8-kV Human-Body Model (A114-B)  
B1  
250-V Machine Model (A115-A)  
1500-V Charged-Device Model (C101)  
DESCRIPTION/ORDERING INFORMATION  
This two-bit non-inverting translator is a bidirectional voltage-level translator and can be used to establish digital  
switching compatibility between mixed-voltage systems. It uses two separate configurable power-supply rails,  
with the A ports supporting operating voltages from 1.65 V to 3.6 V while it tracks the VCCA supply, and the B  
ports supporting operating voltages from 2.3 V to 5.5 V while it tracks the VCCB supply. This allows the support of  
both lower and higher logic signal levels while providing bidirectional translation capabilities between any of the  
1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.  
When the output-enable (OE) input is low, all I/Os are placed in the high-impedance state, which significantly  
reduces the power-supply quiescent current consumption.  
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a  
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NanoStar is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 20072011, Texas Instruments Incorporated  

TXS0102DCUT 替代型号

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