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TW083Z65C PDF预览

TW083Z65C

更新时间: 2024-11-21 14:57:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
12页 960K
描述
N-ch SiC MOSFET, 650 V, 0.083 Ω(typ.)@18V, TO-247-4L(X), 3rd Gen.

TW083Z65C 数据手册

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TW083Z65C  
MOSFETs Silicon Carbide N-Channel MOS  
TW083Z65C  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)  
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)  
(3) High voltage: VDSS = 650 V  
(4) Low drain-source on-resistance: RDS(ON) = 83 m(typ.)  
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA)  
(6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V  
(7) Enhancement mode.  
3. Packaging and Internal Circuit  
1. Drain (heatsink)  
2. Source 1  
3. Source 2  
4. Gate  
Notice: Only use source 2 pin for  
gate input signal return. Please  
make sure that the main current  
flows into the source 1 pin.  
TO-247-4L(X)  
Start of commercial production  
2023-06  
©2022-2023  
2023-06-16  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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