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TW083N65C PDF预览

TW083N65C

更新时间: 2024-11-21 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 846K
描述
N-ch SiC MOSFET, 650 V, 0.083 Ω(typ.)@18V, TO-247, 3rd Gen.

TW083N65C 数据手册

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TW083N65C  
MOSFETs Silicon Carbide N-Channel MOS  
TW083N65C  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)  
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)  
(3) High voltage: VDSS = 650 V  
(4) Low drain-source on-resistance: RDS(ON) = 83 m(typ.)  
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA)  
(6) Enhancement mode.  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
TO-247  
Start of commercial production  
2022-07  
©2022  
2022-12-14  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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