Datasheet > TVV100_07

TVV100_07

更新时间： 2024-10-01 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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TVV100_07 数据手册

TVV100

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVV100 is Designed for

Television Band III Applications up

to 225 MHz.

PACKAGE STYLE .400 8L FLG

FEATURES:

FULL R

• Common Emitter

• P_G= 11 dB at 100 W/225 MHz

• Omnigold™ Metalization System

.1925

.125

4 x .060 R

MAXIMUM RATINGS

MINIMUM

MAXIMUM

inches mm

DIM

16 A

65 V

I_C

inches

.030 / 0.76

.360 / 9.14

.130 / 3.30

.115 / 2.92

.065 / 1.65

.380 / 9.65

.125 / 3.18

.075 / 1.91

V_CBO

V_CEO

V_EBO

P_DISS

T_J

33 V

.390 / 9.91

.765 / 19.43

.655 / 16.64

.905 / 22.99

.430 / 10.92

.007 / 0.18

.130 / 3.30

.175 / 4.45

.280 / 7.11

.405 / 10.29

.735 / 18.67

.645 / 16.38

.895 / 22.73

.420 / 10.67

.003 / 0.08

.120 / 3.05

.159 / 4.04

3.5 V

150 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.8 ^OC/W

T_STG

θ_JC

.395 / 10.03

ORDER CODE: ASI10662

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 5.0 mA

V_CE= 5.0 V

3.5

BV_CER

BV_CEO

BV_EBO

h_FE

R_BE= 15 Ω

I_C= 500 mA

150

---

V_CB= 28 V

f = 1.0 MHz

f = 225 MHz

---

C_OB

P_G

V_CE= 28 V

I_C= 2 X 100 mA

P_OUT= 100 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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