Datasheet > TVV030A_07

TVV030A_07

更新时间： 2024-10-01 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	26K
描述
NPN SILICON RF POWER TRANSISTOR

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TVV030A_07 数据手册

TVV030A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVV030A is Designed for

Television Band III Applications up

to 225 MHz.

PACKAGE STYLE .500 4L STUD(A)

.112 x 45°

FEATURES:

Ø .630 NOM

• Common Emitter

• P_G= 7.5 dB at 30 W/225 MHz

• Omnigold™ Metalization System

• Emitter Ballasting

1/4-28 UNF-2A

MAXIMUM RATINGS

14 A

45 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

25 V

.220 / 5.59

.230 / 5.84

1.050 / 26.67

.555 / 14.10

.505 / 12.83

.007 / 0.18

4.0 V

.545 / 13.84

.495 / 12.57

.003 / 0.08

146 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.2 °C/W

.830 / 21.08

.198 / 5.03

.185 / 4.70

.497 / 12.62

.530 / 13.46

T_STG

θ_JC

ORDER CODE: ASI10661

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CES

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

4.0

I_C= 100 mA

I_C= 25 mA

I_E= 10 mA

R_BE= 10 Ω

BV_CEO

BV_EBO

h_FE

_CE= 5.0 V

I_C= 1.0 mA

I_C= 5.0 A

---

V_CB= 30 V

f = 1.0 MHz

135

C_OB

V_CE= 25 V

f = 175-225 MHz

6.0

7.0

-50

P_G

dBc

---

P_OUT= 30 W

IMD₁

VSWR

3:1

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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