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TVV020

更新时间: 2024-09-27 22:15:11
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 22K
描述
NPN SILICON RF POWER TRANSISTOR

TVV020 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09最大集电极电流 (IC):8 A
基于收集器的最大容量:85 pF集电极-发射极最大电压:35 V
配置:Single最小直流电流增益 (hFE):20
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):140 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管元件材料:SILICONBase Number Matches:1

TVV020 数据手册

  
TVV020  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .500 4L STUD  
The ASI TVV020 is Designed for  
A
45°  
D
FEATURES:  
B
S
S
·
ØC  
D
·
G
· Omnigold™ Metalization System  
J
E
SEATING  
PLANE  
F
I
MAXIMUM RATINGS  
#10-32 UNF  
H
G
8.0 A  
35 V  
IC  
MINIMUM  
MAXIMUM  
inches / mm  
DIM  
inches  
/
mm  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
1.010 / 25.65  
.220 / 5.59  
.495 / 12.57  
.003 / 0.08  
.160 / 4.06  
1.050 / 26.67  
.230 / 5.84  
.505 / 12.83  
.007 / 0.18  
.180 / 4.57  
A
B
C
D
E
F
G
H
I
60 V  
4.0 V  
.622 / 15.80  
.720 / 18.29  
140 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.5 OC/W  
.100 / 2.54  
.130 / 3.31  
.415 / 10.54  
.425 / 10.80  
.250 / 6.35  
.290 / 7.37  
J
TSTG  
qJC  
ORDER CODE: ASI10659  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VCB = 50 V  
VCE = 5.0 V  
65  
60  
35  
4.0  
V
BVCER  
BVCEO  
BVEBO  
ICES  
RBE = 10 W  
V
V
V
5.0  
mA  
---  
hFE  
IC = 1.0 A  
IC = 2.5 A  
20  
120  
COB  
VCB = 30 V  
f = 1.0 MHz  
f = 225 MHz  
85  
pF  
VCE = 25 V  
8.0  
-51  
PG  
dB  
POUT = 14 W  
IMD3  
dBc  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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