Datasheet > TVV014A_07

TVV014A_07

更新时间： 2024-10-01 11:57:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	34K
描述
NPN SILICON RF POWER TRANSISTOR

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TVV014A_07 数据手册

TVV014A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVV014A is designed for

Television Band III Applications up

to 225 MHz.

PACKAGE STYLE .500 6L FLG

FEATURES:

2x ØN

FULL R

• Common Emitter

• P_G= 14 dB at 14 W/225 MHz

• Omnigold™ Metalization System

• Emitter Ballasting

.725/18,42

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.150 / 3.43

.160 / 4.06

10 A

60 V

I_C

.045 / 1.14

.210 / 5.33

.835 / 21.21

.200 / 5.08

.490 / 12.45

.003 / 0.08

.220 / 5.59

.865 / 21.97

.210 / 5.33

.510 / 12.95

.007 / 0.18

V_CBO

V_CEO

V_EBO

P_DISS

T_J

35 V

.125 / 3.18

4.0 V

.725 / 18.42

.970 / 24.64

.090 / 2.29

.150 / 3.81

.980 / 24.89

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

140 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.5 °C/W

.120 / 3.05

T_STG

θ_JC

ORDER CODE: ASI10658

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 10 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

4.0

_CE= 50 V

_CE= 5.0 V

5.0

---

I_C= 1.0 A

I_C= 2.5 A

100

h_FE

V_EB= 28 V

V_CE= 28 V

f = 1.0 MHz

f = 225 MHz

C_OB

P_G

P_OUT= 14 W

-55

IMD₁

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/2

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