Datasheet > TVV010_07

TVV010_07

更新时间： 2024-10-01 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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TVV010_07 数据手册

TVV010

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVV010 is Designed for

Television Band III Applications up

to 225 MHz.

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

• Common Emitter

• P_G= 10 dB at 10 W/225 MHz

• Omnigold™ Metalization System

ØC

#8-32 UNC-2A

MAXIMUM RATINGS

10 A

60 V

I_C

V_CB

V_CE

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

35 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

140 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

2.2 ^OC/W

T_STG

θ_JC

ORDER CODE: ASI10656

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 10 mA

V_E= 28 V

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

4.0

---

V_CE= 5.0 V

I_C= 1.0 A

100

h_FE

V_CE= 25 V

I_C= 1.6 A

f = 225 MHz

P_GE

P_OUT= 10 W

-54

IMD₁

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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