Datasheet > TVU150A_07

TVU150A_07

更新时间： 2024-10-01 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU150A_07 数据手册

TVU150A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU150A is Designed for

Television Band IV & V Applications

up to 860 MHz.

PACKAGE STYLE .450 BAL FLG(B)

.120 x 45°

FULL R

FEATURES:

• Common Emitter

.208

• P_G= 6.5 dB at 150 W/860 MHz

• Omnigold™ Metalization System

4X.060 R

.050 NOM.

.210

MAXIMUM RATINGS

25 A

60 V

I_C

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.373 / 9.47

.385 / 9.78

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.205 / 5.21

.120 / 3.25

.411 / 10.44

.825 / 20.96

.525 / 13.34

1.255 / 31.88

1.675 / 42.55

.002 / 0.05

.130 / 3.30

.421 / 10.69

.865 / 21.97

.535 / 13.59

1.265 / 32.18

1.685 / 42.80

.006 / 0.15

.105 / 2.67

.135 / 3.43

.250 / 6.35

.457 / 11.61

30 V

3.0 V

310 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.55 °C/W

.095 / 2.41

.115 / 2.92

.445 / 11.30

T_STG

θ_JC

ORDER CODE: ASI10653

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 10 mA

BV_CEO

BV_EBO

I_CES

3.0

_CE= 28 V

_CE= 5.0 V

---

I_C= 3.0 A

h_FE

_CB= 28 V

f = 1.0 MHz

f = 860 MHz

100

C_OB

P_G

V_CE= 28 V

P_OUT= 150 W

I_C= 2 X 500 mA

6.5

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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