Datasheet > TVU150_07

TVU150_07

更新时间： 2024-10-01 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
3页	43K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU150_07 数据手册

TVU150

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU150 is Designed for

Television Band IV & V Applications

up to 860 MHz.

PACKAGE STYLE .400 BAL FLG(D)

FEATURES:

FULL R

(4X).060 R

.080x45°

• Common Emitter

• P_G= 10 dB at 150 W/860 MHz

• Omnigold™ Metalization System

.1925

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

25 A

28 V

I_C

DIM

.220 / 5.59

.230 / 5.84

V_CEO

V_CES

V_EBO

P_DISS

T_J

.210 / 5.33

.125 / 3.18

.380 / 9.65

.390 / 9.91

60 V

.580 / 14.73

.620 / 15.75

.435 / 11.05

1.090 / 27.69

1.335 / 33.91

.003 / 0.08

.060 / 1.52

.100 / 2.54

1.105 / 28.07

1.345 / 34.16

.007 / 0.18

.070 / 1.78

.115 / 2.92

.230 / 5.84

.407 / 10.34

.870 / 22.10

3.5 V

300 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.55 °C/W

.395 / 10.03

.850 / 21.59

T_STG

θ_JC

ORDER CODE: ASI10652

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_C= 50 mA

I_E= 10 mA

3.5

4.0

BV_CER

BV_CES

BV_EBO

I_CES

R_BE= 200 Ω

_CE= 30 V

_CE= 5.0 V

---

I_C= 1.0 A

120

h_FE

_CB= 26 V

_CC= 26 V

f = 1.0 MHz

f = 860 MHz

C_OB

I_CQ= 2 X 3000 mA

9.0

P_G

IMD₁

P_OUT= 40 W

-52

dBc

V_CC= 26 V I_CQ= 2 X 150 mA P_OUT= 150 W PEP

VSWR = 5:1 @ all phase angles

No Degradation in Output

Power

Load

Mismatch

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/3

Specifications are subject to change without notice.

12 3

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