Datasheet > TVU100_07

TVU100_07

更新时间： 2024-02-17 23:14:40

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU100_07 数据手册

TVU100

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU100 is a gold mettalized

RF power transistor designed for high

linearity Class-AB operation in UHF

and band IV and V for TV transmitters.

It utilizes emitter ballasting for high

reliability and ruggedness.

PACKAGE STYLE .450 BAL FLG(A)

.060x45°

FULL R

.100x45°

FEATURES:

• Common Emitter, Class AB push-pull

• P_G= 8.5 dB at 100 W/860 MHz

• Omnigold™ Metalization System

• 28 V operations

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.055 / 1.40

.120 / 3.05

.130 / 3.30

.785 / 19.94

.465 / 11.81

.130 / 3.30

MAXIMUM RATINGS

.455 / 11.56

.120 / 3.05

16 A

65 V

I_C

V_CB

V_CE

P_DISS

T_J

.230 / 5.84

.838 / 21.28

.850 / 21.59

1.105 / 28.07

.535 / 13.59

.005 / 0.15

.065 / 1.65

.095 / 2.41

.195 / 4.95

.455 / 11.56

1.095 / 27.81

.525 / 13.34

.002 / 0.05

.055 / 1.40

.080 . 2.03

30 V

220 W @T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.8 °C/W

.445 / 11.30

T_STG

θ_JC

1 = COLLECTOR 2 = BASE 3 = EMITTER

ORDER CODE: ASI10651

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 80 mA

I_C= 120 mA

I_E= 20 mA

V_E= 28 V

BV_CER

BV_EBO

I_CES

R_BE= 75 Ω

3.5

---

_CE= 5.0 V

I_C= 4.0 A

120

h_FE

V_CE= 28 V

P_OUT= 100 W

I_CQ= 2 X 100 mA

P_REF= 25 W

f = 860 MHz

8.5

P_G

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

1/1

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