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TVU100 PDF预览

TVU100

更新时间: 2024-01-29 08:19:47
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

TVU100 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):20 A配置:Single
最小直流电流增益 (hFE):20最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):330 W
子类别:Other TransistorsBase Number Matches:1

TVU100 数据手册

  
TVU100  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .450 BAL FLG(A)  
DESCRIPTION:  
.060x45°  
B
FULL R  
A
.100x45°  
The ASI TVU100 is Designed for  
C
E
D
P
F
FEATURES:  
G
H
· Input Matching Network  
·
J
K
N
M
· Omnigold™ Metalization System  
L
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.055 / 1.40  
.230 / 5.84  
A
B
C
D
E
F
MAXIMUM RATINGS  
.120 / 3.05  
.130 / 3.30  
.785 / 19.94  
.465 / 11.81  
.130 / 3.30  
10 A  
60 V  
IC  
.455 / 11.56  
.120 / 3.05  
VCB  
VCE  
PDISS  
TJ  
.838 / 21.28  
.850 / 21.59  
1.105 / 28.07  
.535 / 13.59  
.005 / 0.15  
.065 / 1.65  
.095 / 2.41  
.195 / 4.95  
.455 / 11.56  
G
H
J
1.095 / 27.81  
.525 / 13.34  
.002 / 0.05  
.055 / 1.40  
.080 . 2.03  
35 V  
K
L
140 W @TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.0 OC/W  
M
N
P
.445 / 11.30  
TSTG  
qJC  
ORDER CODE: ASI10651  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VE = 28 V  
35  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
60  
V
4.0  
V
5
mA  
---  
hFE  
VCE = 5.0 V  
IC = 1.0 A  
10  
100  
VCE = 25 V  
POUT = 100 W  
ICQ = 2 X 100 mA  
f = 860 MHz  
PGE  
8.5  
dB  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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