Datasheet > TVU025_07

TVU025_07

更新时间： 2024-02-02 08:15:14

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU025_07 数据手册

TVU025

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .450 BAL FLG(A)

The ASI TVU025 is a gold metalized

RF power transistor designed for high

linearity Calss-AB operation in UHF

band IV and V TV transmitters.

.060x45°

FULL R

.100x45°

FEATURES:

• Common Emitter

• P_G= 9.0 dB at 25 W/860 MHz

• Omnigold™ Metalization System

• Internal Input Matching

• 28 V operations

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.055 / 1.40

.230 / 5.84

.120 / 3.05

.130 / 3.30

.785 / 19.94

.465 / 11.81

.130 / 3.30

MAXIMUM RATINGS

.455 / 11.56

.120 / 3.05

8.0 A

45 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.838 / 21.28

.850 / 21.59

1.105 / 28.07

.535 / 13.59

.005 / 0.15

.065 / 1.65

.095 / 2.41

.195 / 4.95

.455 / 11.56

1.095 / 27.81

.525 / 13.34

.002 / 0.05

.055 / 1.40

.080 . 2.03

30 V

3.0 V

135 W @ T_C= 25 °C

-50 °C to +200 °C

-50 °C to +150 °C

1.3 °C/W

.445 / 11.30

1 = Collector

2 = Base

3 = Emitter

T_STG

θ_JC

ORDER CODE: ASI10650

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 200 mA

I_E= 10 mA

BV_CEO

BV_EBO

I_CEO

3.0

V_CE= 25 V

5.0

---

V_CE= 5.0 V

I_C= 3.0 A

h_FE

V_CB= 28 V

f = 1.0 MHz

C_OB

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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