Datasheet > TVU020_07

TVU020_07

更新时间： 2024-11-11 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	77K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU020_07 数据手册

TVU020

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU020 is a common emitter RF

bipolar transistor capable of providing 20 W

peak, Class-A, RF power output over 470-860

MHz. It utilizes emitter ballasting & input

impedance matching to provide broadband

performance.

PACKAGE STYLE .400 BAL FLG(A)

FULL R

4X.060 R

FEATURES:

• 470-860 MHz

• Common Emitter

• P_G= 8.5 dB at 20 W/860 MHz

• Omnigold™ Metalization System

• InPut bradband matching

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.210 / 5.33

.045 / 1.14

.125 / 3.18

.380 / 9.65

.770 / 19.56

.070 / 1.78

.215 / 5.46

.420 / 10.67

.645 / 16.38

.895 / 22.73

.002 / 0.05

.058 / 1.47

.115 / 2.92

.230 / 5.84

.055 / 1.40

.135 / 3.43

.390 / 9.91

.830 / 21.08

.080 / 2.03

.235 / 5.97

.430 / 10.92

.655 / 16.64

.905 / 22.99

.006 / 0.15

.065 / 1.65

.130 / 3.30

.230 / 5.84

.405 / 10.29

MAXIMUM RATINGS

4.5 A

28 V

I_C

V_CEO

V_CES

V_EBO

P_DISS

T_J

50 V

.395 / 10.03

4.0 V

ORDER CODE: ASI10648

80 W @ T_C= 25 °C

-65°C to +200°C

-65 °C to +150 °C

1.2 °C/W

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 40 mA

I_C= 20 mA

I_E= 10 mA

V_CE= 26.5 V

V_CE= 5.0 V

4.0

---

BV_CES

BV_EBO

I_CEO

5.0

---

I_C= 1.0 A

150

h_FE

8.5

-46

9.5

-48

P_G

_CE= 26.5 V

P_OUT= 20 W

f = 470-860 MHz

IMD₃

dBc

-46

I_C= 2 X 1350 Ma P_IN= 2.8 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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