Datasheet > TVU014_07

TVU014_07

更新时间： 2024-11-11 08:32:19

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
3页	71K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU014_07 数据手册

TVU014

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU014 is a gold metallized

RF power transistor designed for

Class-A, UHF and band IV and V TV

transmitter applications. It utilizes

emitter ballasting for high reliability

and ruggedness.

PACKAGE STYLE .250 BAL FLG

.020 x 45°

Ø.130 NOM.

.050 x 45°

FEATURES:

• Common Emitter: Class-A, 25 V

• P_G= 8.5 dB at 14 W/860 MHz

• Omnigold™ Metalization System

• Internal input matching

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.060 / 1.52

.125 / 3.18

.055 / 1.40

.065 / 1.65

2 x 2.6 A

45 V

I_C

.243 / 6.17

.255 / 6.48

.630 / 16.00

.670 / 17.01

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.092 / 2.34

.555 / 14.10

.739 / 18.77

.315 / 8.00

.002 / 0.05

.055 / 1.40

.075 1.91

.565 / 14.35

.750 / 19.05

.327 / 8.31

.006 / 0.15

.065 / 1.65

.095 / 2.41

.190 / 4.83

.257 / 6.53

25 V

4.0 V

65 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

2.5 °C/W

.245 / 6.22

1 = COLLECTOR

2 = BASE

3 = EMITTER

T_STG

θ_JC

ORDER CODE: ASI10647

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 20 mA

I_C= 40 mA

I_E= 5.0 mA

V_CE= 20 V

3.0

BV_CEO

BV_EBO

h_FE

I_C= 0.5 A

200

---

V_CB= 25 V

f = 1.0 MHz

f = 845 MHz

C_OB

V_CE= 25 V

I_C= 2 x 850 mA

P_IN= 2.0 W

8.5

-50

P_G

P_OUT= 14 W

IMD₁

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

1/3

12 3

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