Datasheet > TVU012_07

TVU012_07

更新时间： 2024-01-23 03:56:28

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	80K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU012_07 数据手册

TVU012

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU012 is a common emitter RF

bipolar transistor capable of providing 12 W,

peak, Class-A, RF power output over 470-860

MHz. It utilizes input impedance matching to

provide broadband performance.

PACKAGE STYLE .400 8L FLG

FULL R

FEATURES:

.1925

.125

4 x .060 R

• 470-860 MHz operation

• Input Matching Network

• Common emitter

• Omnigold™ Metalization System

with eutectic die bonding

MINIMUM

MAXIMUM

inches mm

DIM

inches

.030 / 0.76

.360 / 9.14

.130 / 3.30

.115 / 2.92

.065 / 1.65

.380 / 9.65

.125 / 3.18

.075 / 1.91

MAXIMUM RATINGS

.390 / 9.91

.765 / 19.43

.655 / 16.64

.905 / 22.99

.430 / 10.92

.007 / 0.18

.130 / 3.30

.175 / 4.45

.280 / 7.11

.405 / 10.29

3.5 A

45 V

I_C

.735 / 18.67

.645 / 16.38

.895 / 22.73

.420 / 10.67

.003 / 0.08

.120 / 3.05

.159 / 4.04

V_CES

V_CE

P_DISS

T_J

28 V

80 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.6 °C/W

.395 / 10.03

ORDER CODE: ASI10646

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 65 mA

I_C= 25 mA

I_E= 10 mA

4.0

BV_CES

BV_EBO

h_FE

_CE= 5.0 V

I_C= 500 mA

100

-52

3:1

---

8.9

9.5

P_G

IMD₁

V_CE= 26.5 V

P_OUT= 12 W

V_CB= 26 V

I_C= 2 X 0.85 mA f = 860 MHz

dBc

P_IN= 1.55 W

f = 470-860 MHz

f = 1.0 MHz

C_OB

---

VSWR

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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