TVU005B

更新时间： 2024-01-25 01:20:18

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	69K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU005B 数据手册

TVU005B

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The TVU005B is a Common Emitter

Device Designed for High Linearity

Class A Band IV and V Television

Transmitters.

PACKAGE STYLE .204 4L STUD

FEATURES INCLUDE:

· High Gain - 13 dB min.

· Gold Metalization

· Emitter Ballasting

MAXIMUM RATINGS

I_C

300 mA

V_CB

P_DISS

T_J

45 V

5.3 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

33 ^OC/W

T_STG

q_JC

1 = COLLECTOR

2 & 4 = EMITTER

3 = BASE

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

BV_CBO

BV_EBO

h_FE

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_E= 1.0 mA

V_CE= 5.0 V

3.5

I_C= 100 mA

200

3.0

---

C_OB

V_CB= 28 V

f = 1.0 MHz

---

V_CE= 20 V I_C= 150 mA P_ref= 0.5 W f = 860 MHz

SOUND = -7.0 dB VISION = -8.0 dB CHROMA = -16 dB

P_G

-58

dBc

IMD₃

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are Subject to change without notic.

REV. A

1/2

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