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TVU004

更新时间: 2024-11-10 22:15:15
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 22K
描述
NPN SILICON RF POWER TRANSISTOR

TVU004 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-XRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07最大集电极电流 (IC):1.59 A
基于收集器的最大容量:20 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-XRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):31.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管元件材料:SILICON
Base Number Matches:1

TVU004 数据手册

  
TVU004  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .280 4L STUD  
The ASI TVU004 is Designed for  
A
45°  
D
FEATURES:  
S
B
S
·
G
·
C
· Omnigold™ Metalization System  
D
J
E
I
F
MAXIMUM RATINGS  
G
H
K
#8-32 UNC  
1.59 A  
65 V  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
VCBO  
VCES  
VEBO  
PDISS  
TJ  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
A
B
C
D
E
F
G
H
I
65 V  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
3.5 V  
.572 / 14.53  
.130 / 3.30  
31.8 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
7.0 OC/W  
.245 / 6.22  
.255 / 6.48  
.640 / 16.26  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
TSTG  
qJC  
ORDER CODE: ASI10645  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 5 mA  
IC = 10 mA  
IC = 5 mA  
IE = 5 mA  
VCB = 40 V  
VCE = 5.0 V  
20  
65  
65  
3.5  
V
BVCES  
BVCBO  
BVEBO  
ICBO  
V
V
V
1.0  
mA  
---  
hFE  
IC = 800 mA  
IC = 850 mA  
20  
200  
COB  
VCE = 25 V  
f = 1.0 MHz  
f = 860 MHz  
20  
pF  
VCE = 25 V  
PG  
8.5  
-60  
dB  
POUT = 4.0 W  
IMD3  
dBc  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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