Datasheet > TVU002_07

TVU002_07

更新时间： 2024-02-28 05:10:24

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU002_07 数据手册

TVU002

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU002 is a common

Emitter device especially designed for

Class-A applications in UHF frequency

range and TV band IV & V. Gold

metalization & Emitter Ballasting

assure high reliability & ruggedness.

PACKAGE STYLE .280 4L STUD

45°

FEATURES:

• Common Emitter – Class-A

• P_G= 8.5 dB at 2.0 W/860 MHz

• Omnigold™ Metalization System

• Emitter Ballasting

#8-32 UNC

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

800 mA

45 V

I_C

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

V_CBO

V_EBO

P_DISS

T_J

4.0 V

.572 / 14.53

.130 / 3.30

15.9 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

11 °C/W

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

ORDER CODE: ASI10644

CHARACTERISTICS ^T_C^{= 25}°^C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 Ma

I_C= 80 mA

I_E= 1.0 mA

BV_CEO

BV_EBO

I_CBO

4.0

_CB= 28 V

_CE= 20 V

0.45

100

---

I_C= 250 mA

h_FE

V_CB= 25 V

f = 1.0 MHz

C_OB

V_CE= 25 V

I_C= 450 mA

P_OUT= 2.0 W

P_G

f₁= 860 MHz,

Vision = -8 dB, sideband = -16 dB, sound = -7 db

f₂= 863.5 MHz,

f₃= 864.5 MHz

-60

IMD₁

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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