Datasheet > TVU001_07

TVU001_07

更新时间： 2024-02-01 10:47:46

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU001_07 数据手册

TVU001

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU001 is designed for UHF

linear applications; especially TV

bands IV & V. It is characterized for

high linearity, Class-A operation. It

utilizes Emitter Ballasting and gold

metalization for ruggedness &

reliability.

PACKAGE STYLE .280 4L STUD

45°

FEATURES:

• Common Emitter, 20 V operation

• P_G= 10 dB at 1.0 W/860 MHz

• Omnigold™ Metalization System

• Emitter Ballasting

#8-32 UNC

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

MAXIMUM RATINGS

1.2 A

45 V

I_C

.572 / 14.53

.130 / 3.30

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.245 / 6.22

.255 / 6.48

25 V

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

3.5 V

ORDER CODE: ASI10643

19.4 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

9.0 °C/W

T_STG

θ_JC

CHARACTERISTICS ^T_C^{= 25}°^C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 2.0 mA

I_C= 40 mA

I_E= 0.5 mA

V_CB= 28 V

3.5

BV_CER

BV_CEO

BV_EBO

I_CBO

R_BE= 10 Ω

0.45

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/2

Specifications are subject to change without notice.

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