Datasheet > TVU0.5A_07

TVU0.5A_07

更新时间： 2024-02-08 04:41:51

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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TVU0.5A_07 数据手册

TVU0.5A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI TVU0.5A is Designed for

Television Band IV & V Applications

up to 860 MHz.

PACKAGE STYLE .205 4L STUD

FEATURES:

• Common Emitter

• P_G= 9.5 dB at 0.5 W/860 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

#8-32UNC

2.0 A

45 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

25 V

.976 / 24.800

.028 / 0.700

1.000 / 25.4000

.031 / 0.800

3.5 V

.138 / 3.500

31.8 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

33 °C/W

.161 / 4.100

.098 / 2.500

.200 / 5.100

.196 / 5.000

.110 / 2.800

.208 / 5.300

.004 / 0.100

.425 / 10.800

.200 / 5.100

.006 / 0.150

.465 / 11.800

2.05 / 5.200

T_STG

θ_JC

ORDER CODE: ASI10641

CHARACTERISTICS ^T_C^{= 25}°^C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_C= 20 mA

I_E= 0.25 mA

BV_CEO

BV_EBO

I_CBO

3.5

_CB= 28 V

_CE= 5.0 V

0.45

120

---

I_C= 100 mA

I_C= 150 mA

h_FE

V_CE= 20 V

f = 860 MHz

9.5

-58

P_G

P_OUT= 0.5 W

IMD₁

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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