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TVU0.5A

更新时间: 2024-11-11 08:32:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

TVU0.5A 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-XRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):2 A
集电极-发射极最大电压:24 V配置:SINGLE
最小直流电流增益 (hFE):15最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-XRPM-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):31.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管元件材料:SILICONBase Number Matches:1

TVU0.5A 数据手册

  
TVU0.5A  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI TVU0.5A is Designed for  
Television Band IV & V Applications  
up to 860 MHz.  
PACKAGE STYLE .205 4L STUD  
D
FEATURES:  
A
Common Emitter  
C
PG = 9.5 dB at 0.5 W/860 MHz  
Omnigold™ Metalization System  
B
G
E
F
H
MAXIMUM RATINGS  
#8-32UNC  
J
2.0 A  
45 V  
IC  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
25 V  
.976 / 24.800  
.976 / 24.800  
.028 / 0.700  
1.000 / 25.4000  
1.000 / 25.4000  
.031 / 0.800  
A
B
C
D
E
F
3.5 V  
.138 / 3.500  
31.8 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
33 °C/W  
.161 / 4.100  
.098 / 2.500  
.200 / 5.100  
.196 / 5.000  
.110 / 2.800  
.208 / 5.300  
G
.004 / 0.100  
.425 / 10.800  
.200 / 5.100  
.006 / 0.150  
.465 / 11.800  
2.05 / 5.200  
H
I
TSTG  
θJC  
J
ORDER CODE: ASI10641  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 1.0 mA  
IC = 20 mA  
IE = 0.25 mA  
45  
V
24  
BVCEO  
BVEBO  
ICBO  
V
3.5  
V
V
CB = 28 V  
CE = 5.0 V  
0.45  
120  
mA  
---  
V
IC = 100 mA  
IC = 150 mA  
15  
hFE  
VCE = 20 V  
f = 860 MHz  
9.5  
-58  
PG  
dB  
POUT = 0.5 W  
IMD1  
dBc  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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