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TVSF0603

更新时间: 2024-09-22 22:15:23
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美高森美 - MICROSEMI /
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7页 828K
描述
FemtoFarad Polymer ESD Suppressor

TVSF0603 数据手册

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TVSF0603  
“FemtoFarad” Polymer ESD Suppressor  
T R A N S I E N T P R O T E C T I O N P R O D U C T S  
DESCRIPTION  
KEY FEATURES  
The “FemtoFarad” product family is specifically for ESD bidirectional protection of  
vulnerable electronic components, especially at IO ports. Continued shrinking of on-  
chip component geometries of sub-micron sizes have reduced levels of ESD at which  
upset and failure occurs to the extent that protection is mandatory for reliability of  
power and data line interfaces. The sub-picofarad capacitance of this series provides  
excellent performance up through six GHz with minimal attenuation without linear  
or harmonic distortion well into the GHz range. In the off-state, this FemtoFarad,  
polymeric based technology is virtually invisible to circuit performance. Its proven  
structure is thick film on a rugged ceramic base that is ideal for automated assembly.  
Subsequent paragraphs and charts describe the outstanding performance and  
reliability of FemtoFarad components and many other features that make them the  
designer’s choice for ESD protection.  
Exceeds surge per IEC 61000-4-2  
Small 0603 footprint  
Linear performance at MHz levels  
Ultra-low capacitance  
Ultra-low-standby current  
Fast response time  
Bidirectional  
Lead-free plated terminals  
APPLICATIONS/BENEFITS  
High speed data line protection  
Low signal distortion/attenuation  
ESD protection for mobile/cell  
phones  
Protects sensitive high frequency  
components  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
Part Ratings and Characteristics  
Performance Characteristics  
Min  
Typ  
Max  
24  
60  
-
Units  
V
Continuous dc operating voltage  
-
-
Clamping voltage 3  
-
35  
125  
8
V
Trigger voltage 4  
-
-
V
ESD Threat voltage capability 5  
Capacitance (@ 1 MHz)  
Standby current (@ 12 V)  
Peak current 3, 5  
15  
0.25  
-
kV  
pF  
nA  
A
-
0.15  
<0.1  
30  
0.01  
-
45  
+85  
-
Operating temperature  
-56  
20  
+25  
°C  
ESD pulse withstand 3  
>500 2  
# pulses  
Notes:  
1. Continuous operation with 12 volts or more under extreme temperature and humidity may cause increasing leakage current and/or shifting  
device resistance. However, even under severe environmental test, characteristics of the device did not change up to 6 V dc operation.  
2. Some shifting in characteristics may occur when tested over several hundred ESD pulses at very rapid rate of 1 pulse per second or faster.  
3. Per IEC 61000-4-2, 30 A @ 8 kV, level 4, clamp measurement made 30 ns after initiation of pulse, all tests in contact discharge mode.  
4. Trigger measurement made using Transmission Line Pulse (TLP) method.  
5. FemtoFarad devices are capable of withstanding up to a 15 kV, 45 A ESD pulse. Device ratings are given at 8 kV per Note 1, unless  
otherwise specified.  
Environmental Specifications:  
Moisture Resistance, steady state: MIL-STD-883, method 1004.7, 85% RH, 85ºC, 240 hrs.  
Thermal shock: MIL-STD-202, Method 107G, -65°C to 125°C, 30 min. cycle, 10 cycles  
Vibration: MIL-STD-202F, Method 201A,(10 to 55 to 10 Hz, 1 min. cycle, 2 hrs each in X-Y-Z)  
Chemical resistance: ASTM D-543, 4 hrs @ 40°C, 3 solutions (H2O, detergent solution, defluxer)  
Operating temperature characteristics, measurement at +25°C, +85°C and –56°C  
Full load voltage: 14.4 V dc, 1000 hrs, 25°C  
Solder leach resistance and terminal adhesion: Per EIA-576  
Solderability: MIL-STD-202, Method 208 (95% coverage)  
Copyright 2004  
TVSF0603.PDF 02-04-2004 REV A  
Microsemi  
Page 1  
Transient Protection Products Group  
8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
http://www.microsemi.com/tvs  

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