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TV30C6V0J(B)-G PDF预览

TV30C6V0J(B)-G

更新时间: 2024-01-12 14:02:16
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
7页 137K
描述
SMD Transient Voltage Suppressor

TV30C6V0J(B)-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Is Samacsys:NBase Number Matches:1

TV30C6V0J(B)-G 数据手册

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SMD Transient Voltage Suppressor  
TV30C5V0-G Thru. TV30C441-G  
Working Peak Reverse Voltage: 5.0 to 440 Volts  
Power Dissipation: 3000 Watts  
RoHS Device  
Features  
DO-214AB (SMC)  
-Ideally for surface mount applications.  
-Easy pick and place.  
-Plastic package has Underwriters Lab.  
flammability classification 94V-0.  
0.280(7.02)  
0.260(6.52)  
-Typical IR less than 1μA above 10V.  
-Fast response time: typically less than 1nS for  
0.245(6.15)  
0.220(5.52)  
0.126(3.16)  
0.22 (2.86)  
uni-direction, less than 5nS for bi-direction,  
from 0V to BV min.  
-Use in sensitive electronic protection against  
0.320(8.02)  
0.305(7.64)  
0.012(0.30)  
0.006(0.15)  
voltage transients induced by inductive load  
switching and lighting on ICs, MOSFET, signal  
lines of sensor units for consumer, computer,  
industrial, automotive and telecommunication.  
0.103(2.59)  
0.079(1.98)  
0.008(0.20)  
0.000(0.00)  
0.060(1.51)  
0.030(0.75)  
Mechanical data  
-Case: JEDEC DO-214AB, molded plastic.  
Dimensions in inches and (millimeter)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
-Polarity: Color band denotes cathode end.  
-Approx. weight: 0.21 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristics  
Symbol  
Units  
Peak power dissipation on 10/1000μS  
waveform (Note 1)  
PPP  
3000  
W
Peak pulse current on 10/1000μS  
IPP  
PD  
See Next Table  
6.0  
A
waveform (Note 1)  
OC  
Steady state power dissipation at TL=75  
W
Peak forward surge current, 8.3ms single  
half sine-wave superimposed on rated  
load, uni-directional only (Note 2)  
300  
IFSM  
VF  
A
V
Maximum instantaneous forward voltage  
at 100A for uni-directional only (Note 3)  
3.5/5.0  
OC  
OC  
Operating junction temperature  
Storage temperature range  
-55 to +150  
-55 to +150  
TJ  
TSTG  
Notes:  
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 OC, per Fig. 1  
2. Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
REV:F  
Page 1  
QW-BTV04  
Comchip Technology CO., LTD.  

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