Datasheet > TV30C600J-G

TV30C600J-G

更新时间： 2024-01-25 17:05:53

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
6页	126K
描述
Transient Suppressor,

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中文翻译

获取价格

技术参数
数据手册

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TV30C600J-G 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.66
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

TV30C600J-G 数据手册

SMD Transient Voltage Suppressor

TV30C5V0-G Thru. TV30C441-G

Working Peak Reverse Voltage: 5.0 to 440 Volts

Power Dissipation: 3000 Watts

RoHS Device

Features

- Glass passivated chip.

SMC/DO-214AB

0.280(7.02)

0.260(6.52)

- 3000W peak pulse power capability with a 10/1000µs

waveform, repetitive rate (duty cycle):0.01%

0.126(3.16)

0.114(2.86)

0.245(6.15)

0.220(5.52)

- Low leakage.

- Uni and Bidirectional unit.

- Excellent clamping capability.

- Very fast response time.

0.320(8.02)

0.305(7.64)

0.012(0.30)

0.006(0.15)

- UL recognized file # E349157

- Range: TV30C5V0J(B) thru. TV30C171J(B)

0.103(2.59)

0.079(1.98)

0.008(0.20)

0.000(0.00)

0.060(1.51)

0.030(0.75)

Mechanical Data

- Case: DO-214AB/SMC molded plastic.

Dimensions in inches and (millimeter)

- Epoxy: UL 94V-0 rate flame retardant

- Terminals: Solderable per MIL-STD-750, method 2026.

Circuit Diagram

- Polarity: Color band denoted cathode

end except bipolar.

Bi-directional

Uni-directional

- Weight: 0.230 gram (approx.)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbol

Characteristics

Value

3000

Units

Peak power dissipation with a 10/1000μs

waveform (Note 1)

PPP

IPP

Peak pulse current with a 10/1000μs

waveform (Note 1)

See Next Table

6.0

Power dissipation on infinite heatsink

at TL=75°C

Peak forward surge current, 8.3ms single

half sine-wave unidirectional only

IFSM

300

(Note 2)

Maximum instantaneous forward voltage

3.5/5.0

at 100A for unidirectional only

(Note 3)

Operation junction and storage

temperature range

TJ, TSTG

-55 to +150

°C

1. Non-repetitive current pulse, per Fig.5 and derated above TA=25°C, per Fig.1

Notes:

2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

Company reserves the right to improve product design , functions and reliability without notice.

REV:H

Page 1

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Comchip Technology CO., LTD.

12 3 4 5 6

中文翻译

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