Datasheet > TV04A5V0KB-HF

TV04A5V0KB-HF

更新时间： 2024-01-17 16:45:48

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
7页	96K
描述
Trans Voltage Suppressor Diode, 5V V(RWM), Bidirectional,

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技术参数
数据手册

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TV04A5V0KB-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
击穿电压标称值：	6.9 V	最大钳位电压：	9.6 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	YES

TV04A5V0KB-HF 数据手册

SMD Transient Voltage Suppressor

Comchip

S M D D i o d e S p e c i a l i s t

TV04A5V0-HF Thru. TV04A441-HF

Working Peak Reverse Voltage: 5.0 to 440 Volts

Power Dissipation: 400 Watts

RoHS Device

Halogen Free

SMA/DO-214AC

Features

- Glass passivated chip.

0.179(4.55)

0.162(4.10)

- 400W peak pulse power capability with a 10/1000

µs waveform, repetitive rate (duty cycle):0.01%

0.064(1.63)

0.049(1.23)

0.109(2.76)

0.099(2.51)

- Low leakage.

- Uni and Bidirectional unit.

- Excellent clamping capability.

- Very fast response time.

0.206(5.22)

0.192(4.87)

0.012(0.30)

0.006(0.15)

Mechanical data

- Epoxy: UL 94V-0 rate flame retardant.

- Case: SMA/DO-214AC, molded plastic.

0.089(2.26)

0.077(1.96)

0.008(0.20) max

0.060(1.51)

0.030(0.75)

- Terminals: solderable per MIL-STD-750,

method 2026.

- Polarity: Color band denotes cathode end

execpt bipolar.

Dimensions in inches and (millimeter)

- Approx. weight: 0.064 grams

Maximum Ratings and Electrical Characteristics

Ratings at 25 ^OC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbol

Characteristics

Value

Units

Peak power dissipation on 10/1000μS

waveform (Note1)

PPPM

400

Peak pulse current on 10/1000μS

waveform (Note 1)

IPPM

See Next Table

1.0

Steady state power dissipation at TL=75°C

PM(AV)

Peak forward surge current, 8.3mS single

half sine-wave unidirectional only (Note 2)

IFSM

Maximum instantaneous forward voltage

at 25.0A for unidirectional only (Note 3)

3.5/5.0

Maximum operating junction temperature

Storage temperature range

-55 to +150

°C

TSTG

Notes:

1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25°C, per Fig. 1.

2. Measured on 8.3mS single half sine-wave or equare wave,duty cycle=4 pulses per minute maximum.

3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

REV:D

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QW-JTV01

Comchip Technology CO., LTD.

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