Datasheet > TUMH2N

TUMH2N

更新时间： 2024-04-09 19:00:08

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	288K
描述
50V,30mA,NPN Bipolar Digital Transistor

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TUMH2N 数据手册

Product Specification

General purpose(dual digital transistors)

TUMH2N

FEATURES



Two DTC144Es chips in SOT-363 package

Transistor elements are independent,

eliminating interference



Mounting cost and area can be cut in half

Halogen free

Qualified to AEC-Q101 standards for high reliability

SOT-363

APPLICATIONS



Dual NPN small signal surface mount transistor

ORDERING INFORMATION

Type No.

Marking

Package Code

TUMH2N

SOT-363

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

Supply Voltage

V_CC

V_IN

Input Voltage

Output Current

I_O

℃

Collector Current

I_C(MAX.)

P_c

100

Power Dissipation

Junction and Storage Temperature

(NOTE 1)

150

T_j,T_stg

-55 to +150

NOTE 1: 120mW per element must not be exceeded.

DTM0086A: April 2018

www.gmesemi.com

12 3 4

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